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Thermal Equilibrium Processes in a-Si:H Solar Cells

Published online by Cambridge University Press:  15 February 2011

Jae-Hee Lee ,
Jae-Seog Koh  and
Jin Jang
Jae-Hee Lee
Affiliation:
Kyungpook Sanup University, College of General Education, Kyungsan, Kyungpook, 713–701, Korea
Jae-Seog Koh
Affiliation:
Research Institute of Industrial Science & Technology, Automation pjvision, Pohang, Kyungpook, 790–330, Korea
Jin Jang
Affiliation:
Kyung Hee University, Department of Physics, Seoul, 130–701, Korea
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Abstract

Hydrogenated amorphous silicon (a-Si:H) solar cells are prepared by plasma enhanced chemical vapor deposition (PECVD). Before quenching the solar cells, the short circuit current (Jsc), open circuit voltage (Voc), fill factor (F. F.) and conversion efficiency (η) are 17.79 mA/cm2, 0.79 V, 53.29, and 7.49 %, respectively. After thermal quenchine the solar cells from 200°C, Jsc, Voc, F. F., and η are 18.64 mA/cm2, 0.8 V, 53.79, and 8.02 %, respectively. We investigated the thermal equilibrium processes of each P, I, and N layers. Also, we obtained the dark current-voltage characteristics of a-Si:H solar cells before and after quenching. We analyze the results in terms of the change of the internal electric field in a-Si:H solar cells, caused by the shift of the Fermi level of P layer toward valence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 361
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Brodsky, M. H. and Title, R. S., Phy. Rev. Lett. 23, 581 (1969).Google Scholar
2. Street, R. A., Knights, J. C., and Biegelsen, D. K., Phy. Rev. B 18, 1880 (1978).Google Scholar
3. Knights, J. C. and Lujan, R. A., Appl. Phys. Lett. 35, 244 (1979).Google Scholar
4. Stutzmann, M., Jackson, W. B., and Tsai, C. C., Phys. Rev. B 32, 23 (1985).Google Scholar
5. Branz, H. M., Capuder, K., Lyons, E. H., Haggerty, J.S., and Adler, D., Phys. Rev. B 36, 7934 (1987).Google Scholar
6. Street, R. A., Kakalios, J., Tsai, C. C., and Hayes, T. M., Phys. Rev. B 35, 1316 (1987).Google Scholar
7. Jang, J., Lee, Y. K. and Kim, S. C., Appl. Phys. Lett. 54, 250 (1989).Google Scholar