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Thermal Equilibrium, Metastable and Irreversible Defects in a-Si:H

Published online by Cambridge University Press:  25 February 2011

R. A Street  and
K. Winer
R. A Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
K. Winer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Measurements are reported of metastable defect states in undoped a-Si: H, with the aim of understanding the relation between the different types of metastability. The temperature dependence of the thermal equilibrium defect density agrees well with a proposed thermodynamic model and their relaxation time varies with deposition conditions. The rate of light induced defect creation and annealing in samples deposited at low temperature and with a large initial defect density, decreases progressively as the irreversible defects are removed by annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 131
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Biegelsen, D. K., Street, R. A., Tsai, C. C. and Knights, J. C., Phys. Rev. B20, 4839(1979).CrossRefGoogle Scholar
2. Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B32, 23 (1985).CrossRefGoogle Scholar
3. Smith, Z, Aljishi, S., Slobodin, D., Chu, V., Wagner, S., Lenahan, P. M., Arya, R. R. and Bennett, M. S., Phys. Rev. Lett., 57, 2450 (1986).CrossRefGoogle Scholar
4. Street, R. A., Hack, M. and Jackson, , Phys. Rev. B35, 1316 (1987).Google Scholar
5. Bhattacharya, E. and Mahan, A. H., Appl. Phys. Lett., 52, 1587 (1988).CrossRefGoogle Scholar
6. Ohsawa, M., Hama, T., Ichimura, T., Akasaka, T., Sakai, H., Ishida, S. and Uchida, Y., J. Non-Cryst solids, 77&78, 401 (1985).Google Scholar
7. Smith, Z. E. and Wagner, S., Phys. Rev. B32, 5510 (1985).Google Scholar
8. Street, R. A. and Winer, K. to be published.Google Scholar
9. Jackson, W. B. and Kakalios, J., Phys Rev. B37, 1020 (1988).Google Scholar
10. McMahon, T. J. and Tsu, R., Appl. Phys. Lett., 51, 412 (1987).CrossRefGoogle Scholar