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Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films

Published online by Cambridge University Press:  25 February 2011

Xixiang Xu ,
Akiharu Morimoto ,
Minoru Kumeda  and
Tatsuo Shimizu
Xixiang Xu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Akiharu Morimoto
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Tatsuo Shimizu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
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Abstract

Both the temperature dependence at elevated temperature and the increase after fast cooling from elevated temperature of the density of dangling bonds are measured by ESR for undoped hydrogenated amorphous silicon–based alloy films, a–Si:H, a–Si1−xCx:H, a–Si1−xNx:H and a–Si1−xOx:H. Both a–Si:H and a–Si1−xCx:H clearly show the increase in the density of dangling bonds at elevated temperature, while the increase is less prominent for a–Si1−xNx:H and a–Si1−xOx:H. The observed results for both a–Si:H and a–Si1−xCx:H are fairly well reproduced by the model recently proposed by Smith et al. The results of CPM measurements combined with those of ESR measurements suggest that the density of charged dangling bonds present in undoped a–Si:H also increases after fast cooling from elevated temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 143
Copyright
Copyright © Materials Research Society 1989

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References

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