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Thermal Emission and Vertical-Transport Studies in III/V Semiconductor Multi-Quantum-Well Structures

Published online by Cambridge University Press:  21 February 2011

S. Weber ,
W. Limmer ,
K. Thonke ,
R. Sauer ,
T. Sauer ,
D. Geiger ,
H. Meyer  and
K. Panzlaff
S. Weber
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
W. Limmer
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
K. Thonke
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
R. Sauer
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
T. Sauer
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
D. Geiger
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
H. Meyer
Affiliation:
IBM Forschungszentrum Zürich, Säumerstr. 4, CH 8803 Rüschlikon, Switzerland
K. Panzlaff
Affiliation:
Abteilung Optoelektronik, Albert-Einstein-Allee 45, Universitàt Ulm, D 89069 Ulm, Germany
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Abstract

For the thermal quenching of quantum well (QW) photoluminescence (PL) controversal de-activation energies have been reported. Values range from the total exciton (or electron-hole) binding energy Ex to half of Ex or to the binding energy of the shallower bound particle. We resolve this controversy by performing steady-state measurements both under high and extremely low (Iex≈l μW/mm2) excitation conditions on a series of multiple QW structures of the material systems InxGa1-xAs/GaAs and GaAs/AlyGa1-yAs. For high and low excitation, we find that the final de-activation step is associated with Ex. In an intermediate temperature range, the first decade of PL quenching is governed by a de-activation energy close to the binding energy of the shallower bound particle.

Also performed were temperature dependent photoluminescence excitation (PLE) measurements under high injection in InxGa1-xAs/GaAs double QWs with additional AlyGa1-yAs cladding barriers. Vertical transport between the QWs is observed and the underlying de-activation energies are found to be equal to the total exciton binding energies Ex We discuss our findings in the frame of a simple model for the thermalization of electrons and holes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 489
Copyright
Copyright © Materials Research Society 1994

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