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Thermal Disordering of Modulation Doped AlAs/GaAs Superlattice

Published online by Cambridge University Press:  28 February 2011

Kunihiko Hara ,
Hiroshi Ito ,
Shinya Ohmi  and
Takamasa Suzuki
Kunihiko Hara
Affiliation:
Nippondenso Co., Ltd. Research and Development Dept., 1-1 Showa cho, Kariya city, Aichi Pref., 448 Japan
Hiroshi Ito
Affiliation:
Nippondenso Co., Ltd. Research and Development Dept., 1-1 Showa cho, Kariya city, Aichi Pref., 448 Japan
Shinya Ohmi
Affiliation:
Nippondenso Co., Ltd. Research and Development Dept., 1-1 Showa cho, Kariya city, Aichi Pref., 448 Japan
Takamasa Suzuki
Affiliation:
Nippondenso Co., Ltd. Research and Development Dept., 1-1 Showa cho, Kariya city, Aichi Pref., 448 Japan
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Abstract

Interdif fusion of Al and Ga in a Si modulation doped AlAs/GaAs superlattice was studied by photoluminescence technique. The diffusion coefficient of Al and Ga in the modulation doped superlattice is 1/3 to 1/2 of that of uniformly doped superlattice with the same average Si concentration. The dependence of the diffusion coefficient on the average Si concentration is similar to that of uniform doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 165
Copyright
Copyright © Materials Research Society 1990

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References

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