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Published online by Cambridge University Press: 28 February 2011
Interdif fusion of Al and Ga in a Si modulation doped AlAs/GaAs superlattice was studied by photoluminescence technique. The diffusion coefficient of Al and Ga in the modulation doped superlattice is 1/3 to 1/2 of that of uniformly doped superlattice with the same average Si concentration. The dependence of the diffusion coefficient on the average Si concentration is similar to that of uniform doping.