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Thermal Conductivity of Aluminum Nitride Thin Films

Published online by Cambridge University Press:  25 February 2011

L. J. Shaw-Klein ,
S. J. Burns  and
S. D. Jacobs
L. J. Shaw-Klein
Affiliation:
Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
S. J. Burns
Affiliation:
Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
S. D. Jacobs
Affiliation:
Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14623
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Abstract

Anomalously low laser damage resistance thresholds have been observed in many thin film systems. Thermal conductivity values well below bulk have been suggested as a possible cause. A series of reactively sputtered AIN films were deposited on fused quartz and sapphire substrates. Their thermal conductivities were measured using the thermal comparator technique. Important factors contributing to the apparently large thermal resistance in the AIN films include film surfaces, small grain size, and high oxygen concentration. Preferred orientation and columnar morphology also affect film conductivity. Film microstructures were observed by transmission electron microscopy, and correlated with measured values of thermal conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 235
Copyright
Copyright © Materials Research Society 1991

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References

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