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Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs
Published online by Cambridge University Press: 01 February 2011
Abstract
We theoretically investigate the thermal boundary resistance and heat diffusion in AlGaN/GaN heterostructure field-effect transistors. Our calculations based on the diffuse mismatch model show that the thermal boundary resistance at the interface between GaN and SiC can strongly influence the temperature rise in the device channel.
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- Copyright © Materials Research Society 2003
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