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Thermal Annealing and Cooling-Rate Dependent Electronic Properties of Bulk GaAs Crystals

Published online by Cambridge University Press:  26 February 2011

J. M. Parsey Jr ,
M. T. Asom ,
L. C. Kimerling ,
R. Sauer  and
F. A. Thiel.
J. M. Parsey Jr
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. T. Asom
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Sauer
Affiliation:
Universitat Stuttgart, Pfaffenwaldring 57/VI, 7000 Stuttgart 80, W. Germany, work performed while a resident visitor at AT&T Bell Labs.
F. A. Thiel.
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Changes in the electronic properties of bulk GaAs crystals, grown from melts of varied As:Ga ratios, and Si-donor concentrations, were investigated by annealing in the temperature range 850°C to 1050°C. We found a gradual reduction of the free carrier concentration, a corresponding decrease in the luminescence spectral intensity, and a suppression of the near band-edge peaks with annealing time at any temperature. Deep level and impurity concentrations remained essentially constant. The magnitude of these changes was found to be determined predominantly by the annealing time and temperature, and the starting composition of the material We argue for a non-radiative native acceptor defect, or defect complex, forming during the annealing cycle. We present here the thermodynamic interpretation for this behavioi in terms of point defect equilibria.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 429
Copyright
Copyright © Materials Research Society 1988

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Footnotes

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Present address: AT&T Bell Laboratories, Reading, PA 19601

References

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