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Thermal Analysis and Structural Design of Phase Change Random Access Memory

Published online by Cambridge University Press:  01 February 2011

Rong Zhao ,
Ler Ming Lim ,
Luping Shi ,
Hock Koon Lee ,
Hongxin Yang  and
Tow Chong Chong
Rong Zhao
Affiliation:
[email protected], Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, Singapore, Singapore, N/A, 117608, Singapore, (65) 6874 8412, (65) 6777 8517
Ler Ming Lim
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, 10 Kent Ridge Crescent,, S119260, ,, N/A, N/A, Singapore
Luping Shi
Affiliation:
[email protected], Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, S117608, ,, N/A, N/A, Singapore
Hock Koon Lee
Affiliation:
[email protected], Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, S117608, ,, N/A, N/A, Singapore
Hongxin Yang
Affiliation:
[email protected], Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, S117608, ,, N/A, N/A, Singapore
Tow Chong Chong
Affiliation:
[email protected], Data Storage Institute, Optical Materials & Systems Division, DSI Building, 5 Engineering Drive 1 (Off Kent ridge Crescent, NUS),, S117608, ,, N/A, N/A, Singapore
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Abstract

A thermal modeling based on Finite Element Method (FEM) was used to simulate Phase Change Random Access Memory (PCRAM) cells. The factors affecting temperature distribution of a PCRAM cell structure such as geometry, device structure and the properties of the individual materials were investigated. The results of the analysis provided the fundamental design of a novel cell structure which has a better performance and reliability.

Keywords

memorysimulationdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006 , 0918-H05-02-G06-02
Copyright
Copyright © Materials Research Society 2006

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