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Theory of the Sulphur-Passivated InP(001) Surface

Published online by Cambridge University Press:  10 February 2011

Laurent J. Lewis  and
Chandré Dharma-Wardana
Laurent J. Lewis
Affiliation:
Département de physique et GCM, Université de Montréal, C.P. 6128, Succ. Centre-Ville, Montréal, Québec, Canada H3C 3J7
Chandré Dharma-Wardana
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada Ottawa, Ontario, Canada K1A 0R6
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Abstract

We present a detailed and comprenhensive theoretical investigation of the sulphur-passivated (001) surface of InP. First, the ground-state structure is determined using density-functional methods, including full relaxation of the surface. The lowest-energy structure at 0 K is a striking (2 × 2) reconstruction with the S atoms displaced from the bridge sites to form short and long dimers, belonging to two distinct sublayers. This surface structure is used to calculate the backscattering Raman spectrum; the two peaks arising from surface-layer vibrations predicted by our calculations are observed. Next, our first-principles calculations are extended to the study of a number of other stable states of the surface that can arise upon annealing. For this purpose, we construct and relax several higher-energy states of the surface, and calculate the corresponding core-level photoemission spectra. A remarkable sequence of structures is found to unfold from the fully S-covered ground state as they become energetically accessible. The surface S atoms exchange with bulk P atoms, forming new (and strong) S-P bonds while dissociating pre-existing S–S dimers. The predicted core-level spectra are found to be entirely consistent with the experimental measurements; our calculations indicate that the annealed (at about 700 K) surface is a (2 × 2) structure containing two S and two P atoms per unit cell. Finally, we have used the predicted stable surface structures to calculate the photoemission and inverse photoemission spectra. They are found to agree well with experiment if the surface is assumed to consist of a mixture of the above ground-state and annealed structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 3
Copyright
Copyright © Materials Research Society 1999

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