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Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers

Published online by Cambridge University Press:  15 February 2011

A.D. Andreev  and
E.P. O'Reilly
A.D. Andreev
Affiliation:
A.F. loffe Physico-Technical Institute of Russian Academy of Sciences, Polytechnicheskaya 26, St.-Petersburg 194021, Russia; E-mail: [email protected]
E.P. O'Reilly
Affiliation:
Department of Physics, University of Surrey, Guildford GU2 5XH, UK
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Abstract

We present a theoretical analysis of the gain characteristics of InGaN/AlGaN quantum dot (QD) lasers. We calculate the elastic strain distribution caused by the lattice mismatch between the QD and the barrier using an original method which takes into account the hexagonal symmetry of the structure's elastic properties. The method is based on an analytical derivation of the Fourier transform of the strain tensor. The proposed approach is combined with a plane-wave expansion method to calculate the carrier spectrum and wave functions. The many-body gain of a laser containing a periodic array of QDs is calculated using the Padé approximation. We show that band gap reduction and the Coulomb enhancement of the interband transition probability can significantly modify the gain spectrum in InGaN/AlGaN QD lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.45
Copyright
Copyright © Materials Research Society 1999

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