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Theory of Surface Dimerization-induced Ordering in GaInP Alloys

Published online by Cambridge University Press:  10 February 2011

S. B. Zhang
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Sverre Froyen
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Alex Zunger
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
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Abstract

We identify via thermodynamic energy minimization the role of subsurface strain (caused by surface reconstruction and dimerization) in the ordering of Ga0.51n0.5P alloys. Depending on the growth conditions, the alloy surfaces can have either β2(2×4), c(4×4) or c(8×6) reconstructions, with characteristic 2×1, 1×2 and 2×3 RHEED patterns. We show that (i) the 1×2 reconstruction will lead to a CUPtA surface ordering, (ii) a 2×1 reconstruction will lead to a CuPtB ordering, (iii) a 2×3 reconstruction will lead to a 3-period ordering, and (iv) single (double) bilayer steps are stable at low (high) anion chemical potential. These results are in good agreement with recent experimental observations.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

[1] Gomyo, A., Makita, K., Hino, I. and Suzuki, T., Phys. Rev. Lett. 72, 673 (1994).Google Scholar
[2] Philips, B. A., Kamiya, I., Florez, L. T., Aspnes, D. E., Mahajan, S. and Harbison, J. P., Phys. Rev. Lett. 74, 3640 (1995).Google Scholar
[3] Gomyo, A., Sumino, M., Hino, I. and Suzuki, T., Japan J. Appl. Phys. 34, L469 (1995).Google Scholar
[4] Zunger, A. and Mahajan, S. in Handbook of Semiconductors, Edited by Mahajan, S. (Elsevier, Amsterdam), Vol.3, p. 1399 (1994).Google Scholar
[5] Bernard, J. E., Ferreira, L. G., Wei, S. H. and Zunger, A., Phys. Rev. B 38, 6338 (1988); J. E. Bernard, R. G. Dandrea, L. G. Ferreira, S. Froyen, S. H. Wei and A. Zunger, Appl. Phys. Lett. 56, 731 (1990)Google Scholar
[6] Froyen, S. and Zunger, A., Phys. Rev. Lett. 66, 2132 (1991).Google Scholar
[7] Bernard, J. E., Froyen, S. and Zunger, A., Phys. Rev. B 44, 11178 (1991); R. Osorio, J. E. Bernard, S. Froyen and A. Zunger, Phys. Rev. B 45, 11173 (1992).Google Scholar
[8] Pashley, M. D., Haberern, K. W., Friday, W., Woodall, J. M. and Kirchner, P. D., Phys. Rev. Lett. 60, 2176 (1988); H. H. Farrell and C. J. Palmstrom, J. Vac. Sci. Technol. B8, 903 (1990); D. K. Biegelsen, R. D. Bringans, J. E. Northrup and L. E. Swartz, Phys. Rev. B 41, 5701 (1990).Google Scholar
[9] Northrup, J. E. and Froyen, S., Phys. Rev. Lett. 71, 2276 (1993); J. E. Northrup and S. Froyen, Phys. Rev. B 50, 2015 (1994).Google Scholar
[10] Froyen, S. and Zunger, A., Phys. Rev. B (MS#: BJ5703, in press).Google Scholar
[11] Zhang, S. B. and Zunger, A., Phys. Rev. B (Jan. 15, 1996).Google Scholar
[12] Sauvage-Simkin, M., Garreau, Y., Pinchaux, R., Veron, M. B., Landesman, J.P. and Nagle, J., Phys. Rev. Lett. 75, 3485 (1995).Google Scholar
[13] Zhang, S. B. and Zunger, A., Special issue of J. Cryst. Growth on “U.S.-Japan Meeting on Semiconductor Alloys”, edited by Stringfellow, G. B. (1996, in press).Google Scholar
[14] Stringfellow, G. B. and Su, L. C., Abstracts, Mat. Res. Soc. 1995 Fall Meeting, Boston, p. 709.Google Scholar