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Theory of Intrinsic Defects in a-SiO2

Published online by Cambridge University Press:  25 February 2011

Arthur H. Edwards
Arthur H. Edwards*
Affiliation:
U. S. Army Electronics Technology and Devices Lab, Ft. Monmouth, N. J. 07703
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Abstract

In this paper we discuss recent advances in the theory of intrinsic defects in amorphous SiO2. We pay particular attention to the E' centers, and to the oxygen-related hole traps.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 3
Copyright
Copyright © Materials Research Society 1986

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References

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