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Theory of Hydrogen in Semiconductors

Published online by Cambridge University Press:  10 February 2011

Chris G. van de walle
Chris G. van de walle*
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304; [email protected]
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Abstract

This paper treats the subject of hydrogen in semiconductors from various perspectives. First, a brief historical overview is given. Then, some basic principles governing the interaction between hydrogen and semiconductors are outlined. Finally, specific examples will emphasize the impact of hydrogen on technological applications. While the general treatment applies to interactions of hydrogen with any semiconductor, the applications will focus mainly on hydrogen interacting with silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 55
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Mollwo, E., Z. Phys. 138, 478 (1954).Google Scholar
[2] Thomas, D. G. and Lander, J. J., J. Chem. Phys. 25 1136 (1956).Google Scholar
[3] Van Wieringen, A. and Warmoltz, N., Physica 22, 849 (1956).Google Scholar
[4] See, e.g., Joós, B., Haller, E. E., and Falicov, L. M., Phys. Rev. B 22, 832 (1980).Google Scholar
[5] Pankove, J. I., Wance, R. O., and Berkeyheiser, J. E., Appl. Phys. Lett. 45, 1100 (1984).Google Scholar
[6] Johnson, N. M., Herring, C., and Chadi, D. J., Phys. Rev. Lett. 56, 769 (1986).Google Scholar
[7] Lyding, J. W., Hess, K., and Kizilyalli, I. C., Appl. Phys. Lett. 68, 2526 (1996).Google Scholar
[8] Weldon, M. K., Chabal, Y. J., Hamann, D. R., Christman, S. B., Chaban, E. E., and Feldman, L. C. J. Vac. Sci. Technol. B 14, 3095 (1996).Google Scholar
[9] Hohenberg, P. and Kohn, W., Phys. Rev. 136, B864 (1964); W. Kohn and L. J. Sham, ibid. 140, A1133 (1965).Google Scholar
[10] Hamann, D. R., Schliiter, M., and Chiang, C., Phys. Rev. Lett. 43, 1494 (1979).Google Scholar
[11] Van de Walle, C. G., Denteneer, P. J. H., Bar-Yam, Y., and Pantelides, S. T., Phys. Rev. B 39, 10791 (1989).Google Scholar
[12] Van de Walle, C. G., Phys. Rev. B 49, 4579 (1994).Google Scholar
[13] Neugebauer, J. and Van de Walle, C. G., Phys. Rev. Lett. 75, 4452 (1995). 64Google Scholar
[14] Johnson, N. M., Herring, C., and Van de Walle, C. G., Phys. Rev. Lett. 73, 130 (1994); 74, 1889 (1995) (erratum).Google Scholar
[15] Herring, C. and Johnson, N. M.. in Hydrogen in Semiconductors (Pankove, J. I. and Johnson, N. M., eds.), Semiconductors and Semimetals, Vol.34 (Academic Press, San Diego, 1991), p. 279.Google Scholar
[16] Kiefl, R. F. and Estle, T. L., Chapter 15 of Hydrogen in Semiconductors, Semiconductors and Semimetals, Vol.34, Ed. Pankove, J. I. and Johnson, N. M. (Academic Press, 1990), p. 547.Google Scholar
[17] Murakami, K., Fukata, N., Sasaki, S., Ishioka, K., Kitajima, M., Fujimura, S., Kikuchi, J., and Haneda, H., Phys. Rev. Lett. 77, 3161 (1996).Google Scholar
[18] Vetterhöffer, J., Wagner, J., and Weber, J., Phys. Rev. Lett. 77, 5409 (1996).Google Scholar
[19] Chris Van de Walle, G., Phys. Rev. Lett. 80, 2177 (1998).Google Scholar
[20] Blöchl, P. E., Smargiassi, E., Car, R., Laks, D. B., Andreoni, W., and Pantelides, S. T., Phys. Rev. Lett. 70, 2435 (1993).Google Scholar
[21] Pantelides, S. T., Phys. Rev. Lett. 57, 2979 (1986).Google Scholar
[22] Van de Walle, C. G. and Neugebauer, J., Phys. Rev. B 52, R14 320 (1995).Google Scholar
[23] Van de Walle, C. G. and Street, R. A., Phys. Rev. B 49, 14 766 (1994).Google Scholar
[24] Van de Walle, C. G. and Street, R. A., Phys. Rev. B 51, 10 615 (1995).Google Scholar
[25] Nielsen, B. Bech, Phys. Rev. Lett. 66, 2360 (1991).Google Scholar
[26] Van de Walle, C. G. and Nickel, N. H., Phys. Rev. B 51, 2636 (1995).Google Scholar
[27] Neugebauer, J. and Van de Walle, C. G., Appl. Phys. Lett. 68, 1829 (1996).Google Scholar
[28] Wolk, J. A., Ager, J. W. III, Duxstad, K. J., Haller, E. E., Taskar, N. R., Dorman, D. R., and Olego, D. J., Appl. Phys. Lett. 63 2756 (1993).Google Scholar
[29] Lyding, J. W., Shen, T. C., Hubacek, J. S., Tucker, J. R., and Abeln, G. C., Appl. Phys. Lett. 64, 2010 (1994).Google Scholar
[30] Avouris, Ph., Walkup, R. E., Rossi, A. R., Shen, T.-C., Abeln, G. C., Tucker, J. R., and Lyding, J. W., Chem. Phys. Lett. 257, 148 (1996).Google Scholar
[31] Van de Walle, C. G. and Jackson, W. B., Appl. Phys. Lett. 69, 2441 (1996).Google Scholar
[32] Shen, T.-C., Wang, C., Abeln, G. C., Tucker, J. R., Lyding, J. W., Avouris, Ph., and Walkup, R. E., Science 268, 1590 (1995).Google Scholar
[33] Guyot-Sionnest, P., Dumas, P., Chabal, Y. J., and Higashi, G. S., Phys. Rev. Lett. 64, 2156 (1990).Google Scholar
[34] Guyot-Sionnest, P., Lin, P. H., and Miller, E. M., J. Chem. Phys. 102, 4269 (1995).Google Scholar
[35] Lucovsky, G., Yang, J., Chao, S. S., Tyler, J. E., and Czubatyi, W., J. Non-Crystall. Solids 59 & 60, 609 (1983).Google Scholar
[36] Lucovsky, G., Chao, S. S., Yang, J., Tyler, J. E., and Czubatyi, W., J. Vac. Sci. Technol. A 2, 353 (1984).Google Scholar
[37] Madelung, O., editor, Data in Science and Technology: Semiconductors, (Springer- Verlag, Berlin, 1991).Google Scholar
[38] Connell, G. A. N. and Pawlik, J. R., Phys. Rev. B 13, 787 (1976).Google Scholar
[39] Chabal, Y. J., Physica B 170, 447 (1991).Google Scholar
[40] Foley, E. T., Kam, A. F., Lyding, J. W., and Avouris, Ph., Phys. Rev. Lett. 80, 1336 (1998).Google Scholar
[41] Song, M. and Macwilliams, K. P., IEEE Trans. Electron Devices 44, 268 (1997).Google Scholar