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Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

Published online by Cambridge University Press:  15 February 2011

Mark D. Allendorf  and
Carl F. Melius
Mark D. Allendorf
Affiliation:
Combustion Research Facility, Sandia National Laboratories, Livermore, CA 94551-0969
Carl F. Melius
Affiliation:
Combustion Research Facility, Sandia National Laboratories, Livermore, CA 94551-0969
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Abstract

Equilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 29
Copyright
Copyright © Materials Research Society 1992

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References

[1]. Fischman, G. S.; Petuskey, W. T. J. Am. Ceram. Soc. 1985, 68, 185.Google Scholar
[2]. Robertson, R. M.; Rossi, M. J. J. Chem. Phys. 1989, 91, 5037.Google Scholar
[3]. Stinespring, C. D.; Wormhoudt, J. C. J. Appl. Phys. 1989, 65, 1733.Google Scholar
[4]. Mogab, C. J.; Leamy, H. J. J. Appl. Phys. 1974, 45, 1075.Google Scholar
[5]. Noorbatcha, I.; Raff, L. M.; Thompson, D. L. J. Chem. Phys. 1984, 81, 3715.Google Scholar
[6]. Allendorf, M. D.; Kee, R. J. J. Electrochem. Soc 1990, 138, 841.CrossRefGoogle Scholar
[7]. Tanaka, S.; Komiyama, H. J. Am. Ceram. Soc. 1990, 73, 3046.Google Scholar
[8]. Harris, J. M.; Gatos, H. C.; Witt, A. F. J. Electrochem. Soc. 1971, 118, 338.Google Scholar
[9]. Kingon, A. I.; Lutz, L. J.; Liaw, P.; Davis, R. F. J. Am. Ceram. Soc. 1983, 66, 558.Google Scholar
[10]. Stinespring, C. D.; Wormhoudt, J. C. J. Crystal Growth 1988, 87, 481.CrossRefGoogle Scholar
[11]. Allendorf, M. D.; Melius, C. F. J. Phys. Chem. 1991, accepted for publication.Google Scholar
[12]. Reynolds, W. C. The Element Potential Method for Chemical Equilibrium Analysis: Stanford Univ. 1986.Google Scholar
[13]. Ho, P.; Melius, C. F. J. Phys. Chem. 1990, 94, 5120–5127.Google Scholar
[14]. Ho, P.; Coltrin, M. E.; Binkley, J. S.; Melius, C. F. J. Phys. Chem. 1986, 90, 3399.CrossRefGoogle Scholar
[15]. Melius, C. F. in Bulusu, S. N., Ed. Chemistry and Physics of Energetic Materials; Kluwer Academic Publishers: Dorderecht, 1990, p. 21.CrossRefGoogle Scholar
[16]. The JANAF Tables., J. Phys. Chem. Ref. Data 1985, 14, Suppl 1.Google Scholar
[17]. Chu, J. O.; Beach, D. B.; Jasinski, J. M. J. Phys. Chem. 1987, 91, 5340.Google Scholar
[18]. Allen, K. D.; Sawin, H. H. J. Electrochem. Soc. 1986, 133, 421.Google Scholar