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Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

Published online by Cambridge University Press:  15 February 2011

J. Kolnik ,
I. H. Oguzman ,
K. F. Brennan ,
R. Wang  and
P. P. Ruden
J. Kolnik
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, [email protected]
I. H. Oguzman
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, [email protected]
K. F. Brennan
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, [email protected]
R. Wang
Affiliation:
Dept. of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
P. P. Ruden
Affiliation:
Dept. of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
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Abstract

In this paper, we present the first calculations of the electron and hole initiated interband impact ionization rate in zinc blende phase GaN as a function of the applied electric field strength. The calculations are performed using an ensemble Monte Carlo simulator including the full details of the conduction and valence bands along with a numerically determined, wave-vector dependent interband ionization transition rate determined from an empirical pseudopotential calculation. The first four conduction bands and first three valence bands, which fully comprise the energy range of interest for device simulation, are included in the analysis. It is found that the electron and hole ionization rates are comparable over the full range of applied electric field strengths examined. Based on these calculations an avalanche photodiode, APD, made from bulk zinc blende GaN then would exhibit poor noise and bandwidth performance. It should be noted however, that the accuracy of the band structure employed and the scattering rates is presently unknown since little experimental information is available for comparison. Therefore, due to these uncertainties, it is difficult to unequivocally conclude that the ionization rates are comparable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 45
Copyright
Copyright © Materials Research Society 1996

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