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Theoretical Analysis of Sweep-Out Experiments in Doped Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  26 February 2011

Marvin Silver ,
Howard M. Branz  and
David Adler
Marvin Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
Howard M. Branz
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
David Adler
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We analyze the transient response of i/n/i and i/p/i semiconductor structures in terms of space-charge-limited and emission-limited currents. In this ‘sweep-out’ experiment, an initial space-charge-limited current governed by the i-layer characteristics gives way at later times to an emission-limited current from the doped layer. The emission-limited current response can be used as a new spectroscopy for determining the electronic density of states near the mobility edge of doped semiconductors. We summarize the published experimental sweep-out data and draw conclusions about the density of electronic states of both n-type and p-type hydrogenated amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 107
Copyright
Copyright © Materials Research Society 1987

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