Hostname: page-component-7bb8b95d7b-495rp Total loading time: 0 Render date: 2024-09-12T06:59:52.338Z Has data issue: false hasContentIssue false

Texture Evolution During Grain Growth of Aluminum Films

Published online by Cambridge University Press:  25 February 2011

David B. Knorr
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12180-3590 Also Materials Engineering Department
Daniel P. Tracy
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12180-3590 Also Materials Engineering Department
Toh-Ming Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute Troy, New York 12180-3590 Also Physics Department
Get access

Abstract

Aluminum films 1pm in thickness are deposited by sputtering and by partially ionized beam (PIB) deposition. In the as-deposited condition, the sputtered film has a weak texture while the PIB film has a very strong {111} fiber texture. Annealing at temperature between 250°C and 400°C for 0.5 hr induces grain growth accompanied by texture evolution. These aluminum films are characterized by an {111} texture superimposed on a random grain distribution. When the {111} component dominates as in the PIB condition, little texture evolution accompanies grain growth at successively higher temperatures. When the {111} component is weak, the random component decreases at the expense of a strengthening {111}. Grain growth kinetics are similar for both cases.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Vaidya, S. and Sinha, A.K., Thin Solid Films, 75, 253 (1981).Google Scholar
2. Yapsir, A.S., You, L., Lu, T.-M., and Madden, M., J. Mater. Res., 4, 343 (1989).Google Scholar
3. Bai, P., Yang, G.-R., Lu, T.-M., and Lau, L.W.M., J. Vac. Sci. Technol., A8, 1465 (1990).Google Scholar
4. Knorr, D.B. and Lu, T.-M., Appl. Phys. Lett., 54, 2210 (1989).Google Scholar
5. Knorr, D.B. and Lu, T.-M., Textures and Microstructures, in press.Google Scholar
6. Witt, F., Vook, R.W., and Schwartz, M., J. Appl. Phys., 36, 3686 (1965).Google Scholar
7. Mei, S.-N. and Lu, T.-M., J. Vac. Sci. Technol., A6, 9 (1988).Google Scholar
8. Schultz, L.G., J. Appl. Phys., 20, 1030 (1949).Google Scholar
9. Knorr, D.B., Tracy, D.P., and Lu, T.-M., presented at the International Conference on Textures of Materials, ICOTOM 9, Avignon, France, 1990 (submitted for publication).Google Scholar
10. Tracy, B.M., Davies, P.W., and Fanger, D., in Microstructural Science for Thin Film Metallizations in Electronic Applications, edited by Sanchez, J., Smith, D.A., and Delanevolle, N. (TMS, Warrendale, PA, 1988), pp.157167.Google Scholar
11. Thompson, C.V., Ann. Rev. Mater. Sci., 20, 245 (1990).Google Scholar
12. Atkinson, H.V., Acta Metall., 36,. 469 (1988).Google Scholar