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Texture Effects on the Electromigration Behavior of Layered Ti/AlCu/Ti Films

Published online by Cambridge University Press:  15 February 2011

K. P. Rodbell
Affiliation:
IBM Research Division, Yorktown Heights, NY 10598
D. B. Knorr
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180–3590.
D. P. Tracy
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180–3590.
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Abstract

A strong correlation was found between film texture, quantified as fiber plots of (111) intensity versus tilt angle from the normal direction, and the resulting electromigration behavior of layered Ti/AlCu/Ti films. Superior electromigration behavior was found for those films which had a low volume fraction of randomly oriented grains, strong and sharp texture. Film microstructure and electromigration lifetime data on DC magnetron sputtered and electron gun evaporated AI-Cu and layered fine lines, fabricated and tested in the same laboratory, are included for a direct comparison. Outstanding electromigration lifetimes were measured for sputtered, layered, submicron films with copper concentrations between 0.12 - 2wt.%Cu. In contrast the electromigration lifetimes of evaporated layered films were found to degrade rapidly at < 2wt.%Cu. This anomalous electromigration behavior was attributed to both film texture and subtle structural differences in the Ti-Al intermetallics formed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Kwok, T. and Ho, P.S. in Diffusion Phenomena in Thin Films and Microelectronic Materials edited by Gupta, D. and Ho, P.S. (Noyes Publications, Park Ridge, NJ 1988), p. 369.Google Scholar
2. Ames, I., d&Heurle, F.M. and Horstmann, R.E., IBM J. Res. Develop. 14, 461 (1970).CrossRefGoogle Scholar
3. Howard, J.K. and Ho, P.S., U.S. Patent No. 4 017 890 (April 12, 1977).Google Scholar
4. Howard, J.K., White, J.F. and Ho, P.S., J. Appl. Phys., 49, 4083 (1978).Google Scholar
5. Gardner, D.S., Michalka, T.L., Saraswat, K.C., Barbee, T.W., McVittie, J.P. and Meindl, J.D., IEEE Electron Devices, ED–32, (1985).Google Scholar
6. Gardner, D.S., Saraswat, K., Barbee, T.W., U.S. Patent No. 4 673 623 (June 16, 1987).Google Scholar
7. Rodbell, K.P., Dehaven, P.W. and Mis, J.D., in Proceedings of the First MRS Symposium on Materials Reliability Issues in Microelectronics, (MRS Publications, Pittsburgh, 1991), 225, p. 9 1.Google Scholar
8. Rodbell, K.P., Totta, P.A. and White, J.F., U.S. Patent No. 5 071 714 (December 10, 1991).Google Scholar
9. Rosenberg, R., J. Vac. Sci. Technol., 9, 263 (1972).Google Scholar
10. Frear, D.R., Sanchez, J.E., Romig, A.D., Morris, J.W. Jr., Metall. Trans., 21A, 2449 (1990).CrossRefGoogle Scholar
11. Frear, D.R., Michael, J.R., Kim, C., Romig, A.D. Jr. and Morris, J.W. Jr., in Proceedings of SPIE Conference on Metallization: Performance and Reliability Issues for VLSI and ULSI, San Jose, CA (IEEE, New York 1991).Google Scholar
12. Knorr, D.B., Rodbell, K.P. and Tracy, D.P., in Proceedings of the First MRS Symposium on Materials Reliability Issues in Microelectronics, (MRS Publications, Pittsburgh, 1991), 225, p.21.Google Scholar
13. Knorr, D.B., Tracy, D.P. and Rodbell, K.P., Appl. Phys. Lett., 59, 3241 (1991).Google Scholar
14. Vaidya, S. and Sinha, A.K., Thin Solid Films 75, 253 (1981).CrossRefGoogle Scholar
15. Knorr, D.B. and Rodbell, K.P., this symposium.Google Scholar
16. Lytle, S.A. and Oats, A.S., J. Appl. Phys., 71, 174 (1992).Google Scholar