Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T17:58:39.143Z Has data issue: false hasContentIssue false
  • English
  • Français

Tetragonal Distortion in VPE and LPE In1-xGaxAs Grown on (100) Inp

Published online by Cambridge University Press:  22 February 2011

A. T. Macrander  and
S. N. G. Chu
A. T. Macrander
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
S. N. G. Chu
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

The tetragonal distortion present in both VPE and LPE In1-xGaxAs was measured from X-ray rocking curves of the (511) reflection. These measurements were then used to establish coherency limits. In addition, wafer curvature was measured and compared to that calculated via an expression which incorporates both tetragonal distortion and misfit dislocations. Agreement was found except for a case in which stacking faults were present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 491
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Forrest, S. R., “Photodiodes for Long-Wavelength Communication Systems,” Fiber Optic Technology, Dec. 1982, p. 81.Google Scholar
2. Matsushima, Y. and Sakai, K., “Photodetectors”, Ch. 16 in GaInAsP Alloy Semiconductors, ed. Pearsall, T. P. (Wiley, New York, 1982).Google Scholar
3. Ohno, H. and Barnard, J., “Field Effect Transistors”, Ch. 17 in GaInAsP Semiconductors, ed. Pearsall, T. P. (Wiley, New York, 1982).Google Scholar
4. Johnston, W. D. Jr. and Strege, K. E., 38th Annual Device Research Conf. Abstracts, Cornell Univ. vol IV B-3, June 1980.Google Scholar
See also Olsen, G. H., “Vapour-Phase Epitaxy of GaInAsP”, Ch. 1 in GaInAsP Alloy Semiconductors, ed. Pearsall, T. P. (Wiley, New York, 1982), p. 18.Google Scholar
5. Dentai, A. G., Lee, T. P., and Burrus, C. A., Electronics Lett. 13, 484 (1977).CrossRefGoogle Scholar
6. Matsui, J., Onabe, K., Kamejima, T., and Hayashi, I., J. Electro. Chem. Soc. 126, 664 (1979).Google Scholar
7. Rozgonyi, G. A. and Ciesielka, T. J., Rev. Sci. Instrum. 44, 1053 (1973).Google Scholar
8. Chu, S. N. G., Macrander, A. T., Strege, K. E., and Johnston, W. D. Jr., to be published.Google Scholar
9. Olsen, G. H. and Ettenberg, M. E., “Growth Effects in Heteroepitaxy of III-V Compounds”, Ch. 1 in Crystal Growth: Theory and Technique vol. 2, ed. Goodman, C. H. L. (Plenum Press, New York, 1978).Google Scholar
10. Matthews, J. W., Mader, S., Light, T. B., J. Appl. Phys. 41, 3800 (1970).Google Scholar