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Testing of Critical Features of Polysilicon MEMS

Published online by Cambridge University Press:  10 February 2011

D. A. Lavan  and
T. E. Buchheit
D. A. Lavan
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, [email protected]
T. E. Buchheit
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, [email protected]
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Abstract

The behavior of MEMS devices is limited by the strength of critical features such as thin ligaments, oxide cuts joining layers, pin joints and hinges. Devices fabricated at Sandia's Microelectronic Development Laboratory have been successfully tested to investigate these features. A series of measurements were performed on samples with gage lengths of 15 to 1000 microns, using conventional and tungsten coated samples as well as samples that include the critical features of standard components in the test section. Specimens have a freely moving pin joint on one end that anchors the sample to the silicon die to allow rotation to reduce effects of bending. Each sample is loaded in uniaxial tension by pulling laterally with a flat tipped diamond in a computer-controlled Nanoindenter. Load is calculated by resolving the measured lateral and normal forces into the applied tensile force and frictional losses. The specimen cross section and gage length dimensions were verified by measuring against a standard in the SEM. Multiple tests can be programmed at one time and performed without operator assistance allowing the collection of significant populations of data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 605: Symposium MM – Materials Science of Microelectromechanical Systems Devices II , 1999 , 19
Copyright
Copyright © Materials Research Society 2000

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References

1. Koskinen, J., Steinwall, J. E., Soave, R., Johnson, H. H., J. Micromechanics and Microengineering, 3, pp. 13–17, (1993).Google Scholar
2. Brown, S.B., Povirk, G., and Connally, J. in Micro Electro Mechanical Systems - MEMS, (IEEE Proc. Piscataway, NJ 1993) pp. 99–104.Google Scholar
3. Read, D.T. and Marshall, J.C. in Microlithography and Metrology in Micromachining II (SPIE Proc. 2880, 1996) pp. 56–63.Google Scholar
4. Yuan, B., Ph.D. Dissertation, Johns Hopkins University, Baltimore, MD. (1997)Google Scholar
5. Tsuchiya, T., Tabata, O., Sakata, J., Taga, Y. in Tenth Annual International Workshop on Micro Electro Mechanical Systems (IEEE Proc. New York, NY) pp. 529–534.Google Scholar
6. Sharpe, W.N.J., Turner, K.T., and Edwards, R., Experimental Mechanics, 39, pp. 162–170, (1999)Google Scholar
7. Greek, S. and Johansson, S. in Micromachined Devices and Components III (SPIE Proc. 3224, 1997) pp. 344–351.Google Scholar
8. Weibull, W. in Proceedings Royal Swedish Institute for Engineering Research, (151, 1939) pp. 1–45.Google Scholar
9. Sullivan, J.D. and Lauzon, P.H., J. Materials Science Letters, 5, pp. 1245–1247 (1986).10.1007/BF01729379Google Scholar
10. Mani, S.S., Fleming, J.G., and Sniegowski, J.J. in Micromachining and Microfabrication Process Technology V (SPIE Proc 3874, 1999), pp. 150–157.Google Scholar
11. Mani, S.S., Fleming, J.G., Sniegowski, J.J., Boer, M.P. de, Irwin, L. W., Walraven, J. A., Tanner, D. M., LaVan, D. A. in Materials Science of Microelectromechanical Systems (MEMS) II. (MRS Proc. 1999). submitted.Google Scholar
12. LaVan, D.A., Buchheit, T.E., and Nowell, M. in Materials Science of Microelectromechanical Systems (MEMS) Devices II, (MRS Proc. 1999). submitted.Google Scholar
13. Simmons, G. and Wang, H., Single Crystal Elastic Constants and Calculated Aggregate Properties. 2nd ed., The MIT Press, Cambridge, 1971.Google Scholar
14. Voigt, W., Lehrbuch der Kristallphysik, Teubner, B. G., Leipzig, 1910.Google Scholar
15. Reuss, A. in Z. Angew. Math, 9, pp. 49–58, 1928.10.1002/zamm.19290090104Google Scholar
16.For a semielliptical surface flaw (a=c) in a flat plate subject to uniform tension evaluated at #x03C6;=90.Google Scholar
17. Anderson, T.L., Fracture Mechanics, 2nd ed., CRC Press, Boca Raton, FL 1995.Google Scholar