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Test of Kinetic Models for Interface Velocity, Temperature, and Solute Trapping in Rapid Solidification

Published online by Cambridge University Press:  21 February 2011

J.A. Kittl ,
M.J. Aziz ,
D.P. Brunco  and
M.O. Thompson
J.A. Kittl
Affiliation:
Semiconductor Process and Device Center, Texas Instruments Inc., Dallas, TX 75243, [email protected]
M.J. Aziz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
D.P. Brunco
Affiliation:
Intel Corporation, Santa Clara, CA 95052
M.O. Thompson
Affiliation:
Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

During rapid solidification, deviations from local interfacial equilibrium are manifested by solute trapping and interfacial undercooling. Both the solute trapping function and the interface velocity-temperature function have been measured in the Si:As alloy system following pulsed laser melting, permitting us to test models for nonequilibrium interface kinetics. The results are consistent with the Continuous Growth Model “without solute drag” of Aziz and Kaplan and are inconsistent with models that incorporate solute drag effects during solidification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 119
Copyright
Copyright © Materials Research Society 1998

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References

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