Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:46:55.494Z Has data issue: false hasContentIssue false
  • English
  • Français

The Ternary Phase Diagram for Au-Ga-As Using the Flow Chart Technique

Published online by Cambridge University Press:  25 February 2011

C. H. Mueller ,
P. H. Holloway  and
R. G. Connell
C. H. Mueller
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
P. H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. G. Connell
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

Degradation of the Au/GaAs interface during heating is a problem which limits device reliability. The “flow chart” method was used to construct the ternary Au-Ga-As phase diagram and determine the equilibrium reactions which are responsible for interfacial degradation. Interfacial degradation was correlated with the removal of Asx from the interface, which lowered the liquidus temperature and enhanced the dissolution of GaAs. The dissolution proceeds by a series of class II reactions within the Au-AuGa-GaAs ternary system and results in the incorporation of Ga into the Au phase, and growth of several AuxGay phases. However, when the processing is accomplished in a manner which prevents the interface from being depleted in As, no interfacial degradation is expected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 481
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bauer, C. L.. Surface Science. 168, 395 (1986).CrossRefGoogle Scholar
2. Kinsbron, E., Gallagher, P. K., and English, A.T.. Solid State Electronics. 22, 517 (1979).CrossRefGoogle Scholar
3. Yoshie, T., Bauer, C. L., and Milnes, A. G.. Thin Solid Films. 111, 148 (1984).CrossRefGoogle Scholar
4. Leung, S., Wong, L. K., Chung, D. D. L., and Milnes, A. G.. J. Electrochem. Soc. 130, 462 (1985).CrossRefGoogle Scholar
5. Panish, M. B.. J. Electrochem. Soc. 114, 516 (1967).CrossRefGoogle Scholar
6. Tsai, C. T. and Williams, R. S.. J. Mater. Res. 1, 352 (1986).Google Scholar
7. Beyers, R., Kim, K. B., and Sinclair, R.. J. Appl. Phys. 61, 2195 (1987).CrossRefGoogle Scholar
8. Cooke, C. J. and Hume-Rothery, W.. J. Less Common Metals 10, 42 (1966).CrossRefGoogle Scholar
9. Rhines, F. N., Phase Diagrams in Metallurgy, (Mc-Graw-Hill, NY, 1956).Google Scholar
10. Prince, A. Alloy Phase Equilibria, (Elsevier, NY, 1966).CrossRefGoogle Scholar
11. Liu, L.. Ph. D. Dissertation. University of Florida, 1989.Google Scholar
12. Li, B. and Holloway, P. H.. J. Vac. Sci. Technol. A9, 944 (1991).CrossRefGoogle Scholar
13. Kuan, T. S., Batson, P. E., Jackson, T. N., Rupprecht, H., and Wilke, E.L.. J. Appl. Phys. 54, 6952 (1983).CrossRefGoogle Scholar
14. Pugh, J. H. and Williams, R. S.. J. Mater. Res. 2, 343 (1986).CrossRefGoogle Scholar