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Terahertz Resonances in the Dielectric Response Due to Second Order Phonons in a GaSe Crystal

Published online by Cambridge University Press:  01 February 2011

Baolong L. Yu
Affiliation:
[email protected], City College of New York, IUSL-Physics, Marshak Bldg, Rm J201, 160 Convent Avenue,, New York, NY, 10031, United States
Hakan Altan
Affiliation:
[email protected], City College of New York, IUSL-Physics, Marshak Bldg, Rm J201, 160 Convent Avenue, New York, NY, 10031, United States
Fanang Zeng
Affiliation:
[email protected], City College of New York, IUSL-Physics, Marshak Bldg, Rm J201, 160 Convent Avenue, New York, NY, 10031, United States
Vladimir Kartazayev
Affiliation:
[email protected], City College of New York, IUSL-Physics, Marshak Bldg, Rm J201, 160 Convent Avenue, New York, NY, 10031, United States
Robert Alfano
Affiliation:
[email protected], City College of New York, IUSL-Physics, Marshak Bldg, Rm J201, 160 Convent Avenue, New York, NY, 10031, United States
Krishna C. Mandal
Affiliation:
[email protected], EIC Laboratories INC., 111 Downey Street, Norwood, MA, 02062, United States
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Abstract

The dielectric function and momentum relaxation time of carriers for a single-crystal GaSe were investigated using terahertz time-domain spectroscopy over the frequency range from 0.4 to 2.4 THz. The key parameters determined from THz data using the Drude model are: the plasma frequency ωp = 6.1 ± 0.5 THz, the average momentum relaxation time <τ> = 51 +± 6 fs for electrons. The THz absorption spectrum showed resonance structures attributed to the difference frequency combinations associated with acoustical and optical phonons. This paper has already been published, see B. L. Yu, F. Zeng, V. Kartazayev, and R. R. Alfano, “Terahertz studies of the dielectric response of and second order phonons in a GaSe crystal,” Appl. Phys. Lett. 86, 182104 (2005).

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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