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Temperature-Dependent X-Ray Study of Alloyed Gold Metallization Contacts On In1–xGaxAsyP1–y/Inp Layers

Published online by Cambridge University Press:  15 February 2011

J. Vandenberg ,
H. Temkin ,
R. A. Hamm  and
M. A. Diguiseppe
J. Vandenberg
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
H. Temkin
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
R. A. Hamm
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
M. A. Diguiseppe
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, (U.S.A.)
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Extract

Gold metallization for ohmic contacts is extensively used for the fabrication of InP/In1−xGaxAsyPn1−y light-emitting and microwave devices. While the electrical properties of Au/InP and Au/In1−xGaxAsyPn1−y have been the subject of many investigations, relatively little is known about the metallurgy of contact formation and solid state reactions occurring during high temperature alloying and the subsequent device processing steps. Therefore a temperature-dependent X-ray diffraction study on Au–Inn1−xGaxAsyPn1−y interface reactions was made as a function of composition x, y.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 421
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1 Nagai, H. and Noguchi, Y., Appl. Phys. Lett., 32 (1978) 234.Google Scholar
2 Temkin, H., McCoy, R. J., Keramidas, V. G. and Bonner, W. A., Appl. Phys. Lett., 36 (1980) 444.Google Scholar
3 Piotrowska, A., Auvary, P., Guivar'h, A. and Pelous, G., J. Appl. Phys., 52 (1981) 5112.CrossRefGoogle Scholar
4 Bonner, W. A., Mater. Res. Bull., 15 (1980) 63.Google Scholar
5 Temkin, H., Chin, A. K. and DiGuiseppe, M. A., Electron. Lett., 17 (1981) 703.Google Scholar
6 Vandenberg, J. M. and Hamm, R. A., J. Vac. Sci. Technol., 19 (1981) 84.Google Scholar
7 Phillips, J. C., Bonds and Bands in Semiconductors, Academic Press, New York, 1973, p. 196.Google Scholar
8 Sanada, T. and Wada, O., Jpn. J. Appl. Phys., 19 (1980) L491.Google Scholar
9 Vandenberg, J. M., Temkin, H., Hamm, R. A. and DiGuiseppe, M. A., J. Appl. Phys., 53 (1982) 7385.Google Scholar