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Temperature-Dependent Structural Disintegration of Delafossite CuFeO2

Published online by Cambridge University Press:  31 January 2011

Shojan P Pavunny
Affiliation:
[email protected], University of Puerto Rico, Physics, San Jaun, PR, Puerto Rico
Ashok Kumar
Affiliation:
[email protected], University of Puerto Rico, Department of Physics, University campus, San Juan, PR, 00931, Puerto Rico
Reji Thomas
Affiliation:
[email protected], University of Puerto Rico, Physics, San Jaun, PR, Puerto Rico
Nishit M Murari
Affiliation:
[email protected], University of Puerto Rico, Physics, San Jaun, PR, Puerto Rico
Ram S Katiyar
Affiliation:
[email protected], University of Puerto Rico, Physics, San Jaun, PR, Puerto Rico
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Abstract

Single phase delafossite p-type CuFeO2 (CFO) semiconductor was synthesized in bulk by modified solid state reaction technique. X-ray diffraction (XRD) and X-ray photo spectroscopy (XPS) studies suggest single phase CFO at room temperature. The energy dispersive X-ray spectroscopy (EDX) revealed that the atomic ratio of Cu and Fe is 1:1. The XPS spectra showed two intense Cu 2p3/2 and 2p1/2 peaks at 932.5 eV and 952 eV suggesting Cu is in +1 state. The temperature dependent Raman spectra of CFO displayed two intense modes at 349 cm-1 and 690 cm-1 at room temperature that matched with other delaffosite structures. The temperature dependent Raman spectra showed significant shift in both Raman active modes to lower frequency side. We observed the disappearance of pure CFO Raman active modes above 750 K and the appearance of new peaks related to CuO compounds, indicating disintegration of CFO starting above 750 K which almost completed above 1100 K. The temperature dependent thermo-gravimetric analysis indicates change in CFO mass above 750 K with wide range of differential thermo-gravimetric slope suggests disintegration started above 750 K and completed at 1100 K. Raman spectra, XPS, and XRD of disintegrated CFO matched well with the Raman spectra, XPS and XRD of CuO and CuFe2O4 confirmed its disintegration above 750 K in air.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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