Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T18:28:19.001Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature-Dependent Infrared Absorption of Hg-Based II-VI Semiconductor Superlattices

Published online by Cambridge University Press:  21 February 2011

Z. Yang ,
Y. Lansari ,
J. W. Han ,
Z. Yu  and
J. F. Schetzina
Z. Yang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
J. W. Han
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Z. Yu
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Get access

Abstract

The optical absorption of a series of HgTe/Cd0.85 Hg0. 15 Te superlattices (SLs) have been measured in the spectral region from 2 to 12 µm at temperatures from 300 K down to 4.2 K. Several subband transitions were identified and their transition energies were compared with theoretical calculations, with the valence band offset δEv between HgTe and CdTe as a fitting parameter. It is found that at a given temperature, a value of δEv = 420 ± 100 meV fits the results of all the SLs, and δEv does not depend on temperature to within ±100 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 257
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Reno, J., Sou, I. K., Faurie, J. P., Berroir, J. M., Guldner, Y., and Vieren, J. P., Appl. Phys. Lett. 49, 106 (1986)Google Scholar
[2] Yang, Z. and Furdyna, J. K., Appl Phys. Lett. 52, 498 (1988)Google Scholar
[3] Hunter, A. T. and McGill, T. C., J. Appl. Phys. 52, 5779 (1981)Google Scholar
[4] Kowalczyk, S. P., Cheung, J. T., Kraut, E. A., and Grant, R. W., Phys. Rev. Lett. 56, 1605 (1986)Google Scholar
[5] Sporken, R., Sivanathan, S., Faurie, J. P., Ehlers, D. H., Fraxedas, J., Ley, L., Pireaux, J. J. and Caudano, R., J. Vac. Sci. Technol. A7, 427 (1989)Google Scholar
[6] Berrior, J. M., Guldner, Y., Vieren, J. P., Voos, M., Chu, X., and Faurie, J. P., Phys. Rev. Lett. 62, 2024 (1989)Google Scholar
[7] Malloy, K. J., and Vechten, J. A. Van, Appl. Phys. Lett. 54, 937 (1989)Google Scholar