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Temperature-Dependent Infrared Absorption of Hg-Based II-VI Semiconductor Superlattices

Published online by Cambridge University Press:  21 February 2011

Z. Yang ,
Y. Lansari ,
J. W. Han ,
Z. Yu  and
J. F. Schetzina
Z. Yang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Y. Lansari
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
J. W. Han
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Z. Yu
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
J. F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
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Abstract

The optical absorption of a series of HgTe/Cd0.85 Hg0. 15 Te superlattices (SLs) have been measured in the spectral region from 2 to 12 µm at temperatures from 300 K down to 4.2 K. Several subband transitions were identified and their transition energies were compared with theoretical calculations, with the valence band offset δEv between HgTe and CdTe as a fitting parameter. It is found that at a given temperature, a value of δEv = 420 ± 100 meV fits the results of all the SLs, and δEv does not depend on temperature to within ±100 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 257
Copyright
Copyright © Materials Research Society 1990

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References

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