Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T07:43:36.964Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependent Micro-Raman Scattering of Sr0.35Ba0.65TiO3 Film Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

Sampriti Sen ,
E. Ching-Prado ,
A. Reynés-Figueroa ,
R. S. Katiyar ,
J. S. Horwitz  and
L. A. Knauss
Sampriti Sen
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras P.R. 00931–3343;
E. Ching-Prado
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras P.R. 00931–3343;
A. Reynés-Figueroa
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras P.R. 00931–3343;
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras P.R. 00931–3343;
J. S. Horwitz
Affiliation:
Naval Research Laboratory, Washington DC 20375.
L. A. Knauss
Affiliation:
Naval Research Laboratory, Washington DC 20375.
Get access

Abstract

A film of Sr0.35Ba0.65TiO3 (SBT) has been grown in situ by pulsed laser deposition on (001) LaAlO3 single crystal. From X-ray diffraction studies the sample is found to be in single phase and well oriented. Raman spectrum of the SBT film shows bands around 178, 219, 296, 513, 571 and 741 cm”. The spectrum is similar to that found in SBT ceramic material, but the frequencies of the phonons are shifted. This can be explained if the film is under stress due to the presence of defects. The bands at 296 and 741cm−1 correspond to the B1 and A1(LO) normal modes of the BaTiO3 (BT) system, and they are representative of the BT tetragonal phase, which at first glance appears to contradict earlier structural symmetry assignment for SBT(x=0.35) film at room temperature. Micro-Raman measurements from different regions of the film indicate that the SBT film is homogeneous. The bands at 296 and 741 cm−1 are broader in comparison to those in BT single crystal and SBT ceramic material. Temperature dependent halfwidths of these modes suggest strong contribution of defects. Temperature dependent results are discussed in terms of anharmonic contributions involving three and four phonon processes as well as defects. Also, the orthorhombic and rhombohedral phase transitions are discussed. Finally, SEM/EDAX and FT-IR techniques have been used for the structural characterization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 177
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1- Horwitz, J. S., Chrisey, D.B., Pond, J.M., Auyeung, R.C.Y., Cotell, C.M., Grabowski, K.S.and Kluskens, M.S., Integrated Ferroelectrics, 8, 53 (1995).Google Scholar
2- Nowotny, J., Electronic Ceramic Materials, Trans Tech Publications, Zwich, 1992.Google Scholar
3- Roy, D. and Krupanidhi, S.B., Applied Physics Letters, 62, 1056 (1993).Google Scholar
4- Herbert, J. M., Ferroelectric Transducers and Sensors, Gordon and Breach, London, 1982.Google Scholar
5- Jodl, H. J., Jordan, M., and , Däufer, J. Chem. Phys., 98 2332 (1993).Google Scholar
6- Silverman, B. D., Phys. Rev., 125 1921 (1962).Google Scholar
7- Desu, S. B., J. Electrochem. Soc., 140 2981 (1993).Google Scholar
8- Jannot, B., and Godefroy, G., Ferroelectrics, 29 23(1980).Google Scholar