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Temperature Dependent Hall Measurements on CdGeAs2

Published online by Cambridge University Press:  10 February 2011

A.J. Ptak ,
S. Jain ,
K.T Stevens ,
T.H. Myers ,
P.G. Schunemann ,
S.D. Setzler  and
T.M. Pollak
A.J. Ptak
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV
S. Jain
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV
K.T Stevens
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV
T.H. Myers
Affiliation:
Sanders, A Lockheed Martin Company, Nashua, NH; [email protected]
P.G. Schunemann
Affiliation:
Sanders, A Lockheed Martin Company, Nashua, NH
S.D. Setzler
Affiliation:
Sanders, A Lockheed Martin Company, Nashua, NH
T.M. Pollak
Affiliation:
Sanders, A Lockheed Martin Company, Nashua, NH
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Abstract

Seventeen samples of CdGeAs2 have been extensively characterized by temperature-dependent Hall effect and resistivity measurements. Due to the anisotropic nature of the electrical properties, carefully matched sample sets were fabricated with the c-axis either in or out of the plane of the sample. The matched samples allowed determination of carrier concentration and both in-plane and out-of-plane mobilities as a function of temperature. The electrical properties of both undoped and lightly doped samples were dominated by either native defects or residual growth impurities, leading to compensated p-type material. N-type doped material was obtained only with heavy doping. An apparent variation in acceptor activation energy between 110 and 165 meV could be best explained in terms of two deep acceptor levels and at least one shallow donor. Room temperature absorption coefficient data and the relation to background doping is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 427
Copyright
Copyright © Materials Research Society 2000

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References

1. Schunemann, P.G. in Conf. on Lasers and Electro-Optics, 1996 OSA Technical Digest Ser., vol. 9 (Optical Society of America, Washington, DC, 1996) p. 230.Google Scholar
2. Iseler, G.W., Kildal, H., and Menyuk, N., J. Electron. Mater. 7, 737 (1978).Google Scholar
3. Fischer, D.W., Ohmer, M.C., and McCrae, J.E., J. Appl. Phys. 81, 3579 (1997).Google Scholar
4. Bairamov, B.H., Rud', V.Yu., and Rud', Yu.V., in MRS Bulletin vol. 23(7) (Mater. Res. Soc., Pittsburgh, PA, 1998) p.41.Google Scholar
5.See, for example, Ashcroft, N.W. and Mermin, N.D., Solid State Physics (Saunders College Publishers, New York, 1976), p. 586.Google Scholar
6.See, for example, Bube, R.H., Electronic Properties of Crystalline Solids (Academic Press, New York, 1974), p.364.Google Scholar
7.See, for example, McKelvey, J.P., Solid State Physics for Engineering and Materials Science (Krieger Publishing Company, Malabar, Florida, 1993), p. 388.Google Scholar
8. Borisenko, S.I. and Karavaev, G.F., Izv. Vyssh. Uchebn. Zaved., Fiz. 1, 68 (1982). IssNO021-3411.Google Scholar
9.See, for example, Bube, R.H., Electronic Properties of Crystalline Solids (Academic Press, New York, 1974), p.311.Google Scholar