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Temperature Dependent Defect Density Calculated from Activated Conductivity of a-Si:H

Published online by Cambridge University Press:  21 February 2011

T. Drusedau ,
V. Kirbs  and
H. Fiedler
T. Drusedau
Affiliation:
FB Physik, Universitat Kaiserslautern, Postfach 3049, W–6750 Kaiserslautern, (on leave from: Inst. Exp. Physik der TU “Otto von Guericke”, PSF 124, O-3010 Magdeburg), Fed. Rep. of Germany
V. Kirbs
Affiliation:
Inst. Exp. Physik der TU “Otto von Guericke”, PSF 124, O-3010 Magdeburg), Fed. Rep. of Germany
H. Fiedler
Affiliation:
Inst. Exp. Physik der TU “Otto von Guericke”, PSF 124, O-3010 Magdeburg), Fed. Rep. of Germany
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Abstract

Thermally activated conductivity of a—Si:H at a slow cooling rate of 0.3 K/min is connected with temperature dependent changes of the mobility gap states. By means of the Fermi—level shift calculated from these data and a density of states model it is possible to determine this dependence. The results mainly reveal a decrease of the defect state density by about a tenth between 375 K and 400 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 123
Copyright
Copyright © Materials Research Society 1991

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References

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