Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-20T14:42:16.739Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependent Amorphization of Silicon During Self-Implantation1

Published online by Cambridge University Press:  26 February 2011

W.P. Maszara ,
G.A. Rozgonyi ,
L. Simpson  and
J.J. Wortman
W.P. Maszara
Affiliation:
Materials Engineering Dept., North Carolina State Univ., Raleigh NC 27695
G.A. Rozgonyi
Affiliation:
Materials Engineering Dept., North Carolina State Univ., Raleigh NC 27695
L. Simpson
Affiliation:
Dept. of Electrical and Computer Engineering, NCSU, Raleigh NC 27695
J.J. Wortman
Affiliation:
Dept. of Electrical and Computer Engineering, NCSU, Raleigh NC 27695
Get access

Abstract

We have investigated the damage which results from silicon self-implantation for the range of doses from 2E14 to 1E16 cm−2 for temperatures from 82 to 296 K for 150 and 300 keV implants. Cross-sectional TEM was used to evaluate the nature of the amorphous layer. The experimental results were correlated with computer calculated damage distributions using a Monte Carlo simulation program. The depth of amorphous-crystalline interface(s) was evaluated as a function of dose and temperature. An experimental damage energy density curve was constructed. Using the curve, a critical energy density for amorphization, Ec was calculated for the samples implanted at different temperatures. The energy was found to depend on depth and implant energy, and it increased with temperature. A study of a-c interface morphology shows no dependance on temperature within the range considered. Kinetics of dynamic annealing are discussed in conjunction with the above findings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 381
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

2

Present address: Allied Bendix Aerospace, Columbia MD 21045

1

Partially supported by Semiconductor Research Corporation

References

REFERENCES

1. Stein, H.J. Vook, F.L., Brice, D.K., Borders, J.A. and Picraux, S.T., Proc 1st Int., CnoI= Implantation, 1971, edited by Chadderton, L.T. and Eisen, F.H. (Gordon and Breach, London), p.17. Google Scholar
2. Narayan, J., Fathy, D., Oen, O.S. and Holland, O.W., Mat. Lett. 2 (3), 211 (1984).Google Scholar
3. Morehead, F.F. Jr and Crowder, B.L., Rad. Effects. 7, 27 (1970).CrossRefGoogle Scholar
4. Poate, J.M. and Williams, J.S., in Ion Implantation and Bf rocessing edited by Williams, J.S. and Poate, J.M. (Academic Press, 1984),p.13.Google Scholar
5. Dennis, J.R., Woodward, G.K. and Hale, E.B., in Lattice Deftets in Semiconductors, 11974 (Inst.Phys.Conf.Ser.No. 23,1975), p.467.Google Scholar
6. Dennis, J.R. and Hale, E.B., J. Appl. Phys. R2 (3), 1119 (1978).CrossRefGoogle Scholar
7. Gusev, V.M., Guseva, M.I. and Starinin, C.V., Rad. Effects 15, 251 (1972).CrossRefGoogle Scholar
8. Holland, O.W., Fathy, D. and Narayan, J., in Advanced Phoon and Particle Techniques for the Characterization of Defects In Solids (Mat.Res.Soc. Symp.Proc. vol.41, 1985), edited by Roberto, J.B., Carpenter, R.W. and Wittels, M.C..Google Scholar
9. Biersack, J.P. and Haggmark, L.G., Nucl. Instr. and Meth. 174, 257 (1980).Google Scholar
10. Vook, F.L., in Radiation and Defects in Semiconductors, 1972 (Inst.Phys. Conf.Ser.No.16, 1973), edited by Whitehouse, J.E., p.60.Google Scholar
11. Holland, O.W., Narayan, J. and Fathy, D., presented at 1984 Conf. on Ion Beam Modification of Materials, Cornell University, July 16-20, 1984.Google Scholar
12. Corbett, J.W., Karins, J.P. and Tan, T.Y., Nucl. Instr. and Meth. 182/183, 457 (1981).Google Scholar
13. Williams, J.S., Brown, W.L., Elliman, R.G., Knoell, R.V., Maher, D.M. and Seidel, T.E., in In 2= rgocesses in Advanced Eletronic Materials and Device Technology (Mat.Res.Soc.Symp.Proc., vol.45, 1985), edited by Appleton, B.R., Eisen, F.H. and Sigmon, T.W., p.79.Google Scholar
14. Maszara, W., Sadana, D.K., Rozgonyi, G.A., Sands, T., Washburn, J. and Wortman, J.J., in Ergy Beam-Solid Interactions and Transient Thermal Processing,1984 (Mat.Res.Soc.Proc.,vol 35), edited by Biegelsen, D.K., Rozgonyi, G.A. and Shank, C.V., p.277.CrossRefGoogle Scholar