Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-05T12:15:06.668Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of the Hall Mobility in Polycrystalline Silicon

Published online by Cambridge University Press:  01 January 1993

S.E. Ready ,
J.B. Boyce ,
D.K. Fork ,
P. Mei ,
G.B. Anderson  and
R.I. Johnson
S.E. Ready
Affiliation:
XEROX Palo Alto Research Center,3333 Coyote Hill Road, Palo Alto, CA 94304
J.B. Boyce
Affiliation:
XEROX Palo Alto Research Center,3333 Coyote Hill Road, Palo Alto, CA 94304
D.K. Fork
Affiliation:
XEROX Palo Alto Research Center,3333 Coyote Hill Road, Palo Alto, CA 94304
P. Mei
Affiliation:
XEROX Palo Alto Research Center,3333 Coyote Hill Road, Palo Alto, CA 94304
G.B. Anderson
Affiliation:
XEROX Palo Alto Research Center,3333 Coyote Hill Road, Palo Alto, CA 94304
R.I. Johnson
Affiliation:
XEROX Palo Alto Research Center,3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

Crystallization of amorphous silicon thin films by various methods has fostered enhancements in the electrical characteristics over their amorphous counterparts. For example, carrier mobilities ranging from 10 to >100 cm2/V-sec have been reported for laser crystallized films. The rather large variability of the transport characteristics with crystallization processing conditions is not well understood and, as a result, greatly complicates device process debugging. In addition, while it is generally believed that defects inherent in the grain boundaries provide the primary barriers degrading transport properties relative to single crystal silicon, the specific nature of these defects is not known. In this paper, we present data on the temperature dependence of the Hall mobility of thin silicon films crystallized by thermal and excimer laser processing. Hall data for the laser-crystallized phosphorus-doped material show a temperature dependence which differs dramatically from that for thermally crystallized materials, while the effects of hydrogenation are similar, reducing the barriers at the grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 545
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

2. Johnson, R. I., Anderson, G. B., Ready, S. E., Fork, D. K., and Boyce, J. B., Mat. Res. Soc. Proc. 258, 123 (1992).Google Scholar
3. Ready, S. E., Boyce, J. B., Bachrach, R. Z., Johnson, R. I., Winer, K., Anderson, G. B., and Tsai, C. C., Mat. Res. Soc. Proc. 149, 345 (1989)Google Scholar
4. Bachrach, R. Z., Winer, K., Boyce, J. B., Ready, S. E., Johnson, R. I., and Anderson, G. B., J. Electron Materials, 19, 241 (1990)Google Scholar
5. Seto, J. Y., J. App. Phys. 46, 5247 (1975)Google Scholar
6. Ghosh, A., Rose, A., Maruska, H. P., Feng, T. and Eustace, D. J., J. Elect. Mat. 11, 237(1982)Google Scholar
7. Johnson, N. M., Walker, J., Doland, C. M., Winer, K., and Street, R. A., Appl. Phys. Lett. 54, 1872 (1989)Google Scholar
8. Nickel, N. H., Johnson, N. M., and Jackson, W. B., (1993) (to be published)Google Scholar
9. Blakemore, J. S., Solid State Physics, 2nd ed. (Sanders, W. B., Philadelphia, PA, 1969)Google Scholar
10. Mandurah, M. M., Saraswat, K. C., and Kamins, T. I., Appl. Phys. Lett. 36, 683 (1980)Google Scholar
11. Mandurah, M. M., Saraswat, K. C., and Helms, C. R., J. Appl. Phys. 51, 5755 (1980)Google Scholar
12. Shibata, K. and Onga, S., J. Appl. Phys. 52, 5566 (1981)Google Scholar
13. Johnson, R. I., Anderson, G. B., Boyce, J. B., Fork, D. K., Mei, P., Ready, S. E., and Chen, S., Mat. Res. Soc. Proc. (1993) (to be published)Google Scholar