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Temperature Dependence of the Growth and Saturation of Light-Induced Defects in a-Si:H

Published online by Cambridge University Press:  21 February 2011

M. Isomura ,
N. Hata  and
S. Wagner
M. Isomura
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ, 08544
N. Hata
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ, 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ, 08544
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Abstract

We report new experimental data on the light-soaking of a-Si:H with a Kr-ion laser at an optical generation rate G of at least 4×1021 to 3×1022 cm-3s1. We studied the temperature and intensity dependence of the saturation of the defect density and found that the saturation value of light-induced defects (Nsat) is insensitive to temperature and light intensity below about 90°C. Above 90°C Nsat drops with increasing temperature. This behavior can be explained within the defect pool model by a limited number of defect sites coupled with an annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 27
Copyright
Copyright © Materials Research Society 1991

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References

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