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Temperature Dependence of the Electrical Transport of Carbon Doped Gan

Published online by Cambridge University Press:  10 February 2011

Wim Geerts ,
J.D. MacKenzie ,
C.R. Abernathy ,
S.J Pearton  and
Thomas Schmiedel
Wim Geerts
Affiliation:
Department of Materials Science and Engineering / NHMFL, University of Florida, Gainesville, FL32611, USA
J.D. MacKenzie
Affiliation:
Department of Materials Science and Engineering / NHMFL, University of Florida, Gainesville, FL32611, USA
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering / NHMFL, University of Florida, Gainesville, FL32611, USA
S.J Pearton
Affiliation:
Department of Materials Science and Engineering / NHMFL, University of Florida, Gainesville, FL32611, USA
Thomas Schmiedel
Affiliation:
National High Magnetic Field Laboratory, Tallahassee, FL32306, USA.
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Abstract

The temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 425
Copyright
Copyright © Materials Research Society 1996

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