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Temperature Dependence of the Absorption Band Gap Edge of GaN

Published online by Cambridge University Press:  21 February 2011

M. O. Manasreh  and
A. K. Sharma
M. O. Manasreh
Affiliation:
Phillips Laboratory (PL/VTRP), Kirtland AFB, NM 87117-5776
A. K. Sharma
Affiliation:
Phillips Laboratory (PL/VTRP), Kirtland AFB, NM 87117-5776
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Abstract

The optical absorption near the fundamental absorption edge in GaN thin films grown on sapphire substrates is studied as a function of temperature. The absorption band edge was determined from either the energy position of the exciton line in samples grown by metalorganic chemical vapor deposition technique, or from the first derivative of the absorption spectra in samples grown by molecular beam epitaxy technique. The band edge energies determined in the temperature range of 13 – 300 K were fitted with Varshni empirical relationship: Eg(K) = Eg(0) – α T2/(T + θD) and with the expression: Eg(K) = Eg(0) – κ/[exp(θE/T) – 1]. It is found that Eg(0), α, θD, and θE to be sample-dependent, which suggests that defects and dislocations significantly affect the optical band edge in GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 553
Copyright
Copyright © Materials Research Society 1996

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References

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