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Temperature Dependence of Stresses and H Desorption in Porous Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
The mechanical stress induced in as-prepared porous silicon is generally compressive. Upon thermal annealing, the stress shows hysteresis. Isothermal annealing reveals second-order kinetic processes for both the stress and hydrogen effusion. The correlations between the changes in stress and porous silicon composition and structure are discussed.
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- Copyright © Materials Research Society 1995
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