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The Temperature Dependence of Ion Beam Mixing of Zr on A12O3#

Published online by Cambridge University Press:  26 February 2011

G. C. Farlow ,
S. P. Withrow  and
D. S. Easton
G. C. Farlow
Affiliation:
Wright State University, Dayton, OH 45435
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. S. Easton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Three hundred angstrom Zr films were deposited on A12O3 substrates and irradiated with 300 keV Xe ions to a dose of 1 × 1016 /cm2. The irradiation was carried out at 77 K, 300 K (ambient temperature), and 800 K. Changes in the deposited film and the Zr-A12O3 interface were examined by comparing Rutherford backscattering spectra from irradiated and unirradiated regions of the samples. Ion beam induced reactions were observed at all three temperatures. The systematics of the temperature dependence of ion beam mixing are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 139
Copyright
Copyright © Materials Research Society 1987

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Footnotes

#

Research at Oak Ridge sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc.

References

REFERENCES

1. Nicolet, M.-A., Banwell, T. C., and Paine, B. M., Ion Implantation and Ion Beam Processing of Materials. edited by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., (North Holland, New York, 1984), p. 3, and references therein. See also the Proceeding of the 4th Conference on Ion Beam Modification of Materials, Nucl. Instr. and Meth. B7/8 (1985) pp. 547-720.Google Scholar
2. Matteson, S., Roth, J., and Nicolet, M.-A., Rad. Eff. 42, 217 (1979); J. W. Mayer, B. Y. Tsaur, S. S. Lau, and L.-S. Hung, Nucl. Instr. and Meth. 182/183, 1 (1981).Google Scholar
3. Shreter, U., T, F. C., Paine, B. M., Nicolet, M.-A., Ion Implantation and Ion Beam Processing of Materials, edited by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., (North Holland, New York, 1984), p. 31.Google Scholar
4. Banwell, T., Liu, B. X., Golecki, I., Niclolet, M.-A., Nucl. Instr. and Meth. 209/210, 125 (1983); and C. W. White, G. C. Farlow, J. Narayan, G. J. Clark, and J. E. E. Baglin, Matt. Lett. 2, 367 (1984).Google Scholar
5. Farlow, G. C., Appleton, B. R., Boatner, L. A., McHargue, C. J., White, C. W., Clark, G. J., and Baglin, J. E. E., Ion Beam Processes in Advanced Electronic Materials and Device Technology, edited by Appleton, B. R., Eisen, F. H., and Sigmon, T. W., (North Holland, New York, 1985), p. 137.Google Scholar
6. Banwell, T. C. and Nicolet, M.-A., Ion Implantation and Ion Beam Processing of Materials, edited by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., (North Holland, New York, 1984), p. 109.Google Scholar
7. These are based on enthalpy values found in Kubaschewski, O. and Alcock, C. B., Metallurgical Thermochemistry. 5th edition, (Pergamon Press, New York, 1978), p. 268.Google Scholar
8. Weast, R. C., CRC Handbook of Physics and Chemistry, 57th edition, (CRC Press, Cleveland, OH, 1976), pp. D-61 thru D-66.Google Scholar
9. Chu, W. K., Mayer, J. W., and Nicolet, M.-A., Backscattering Spectrometry, (Academic Press, New York, 1978).Google Scholar