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Temperature Dependence of Electroluminescence from Nanocrystalline Silicon thin Films

Published online by Cambridge University Press:  10 February 2011

T. Toyama ,
Y. Kotani ,
A. Shimode ,
K. Shimizu  and
H. Okamoto
T. Toyama
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531, Japan
Y. Kotani
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531, Japan
A. Shimode
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531, Japan
K. Shimizu
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531, Japan
H. Okamoto
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560-8531, Japan
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Abstract

Temperature dependence of electroluminescence (EL) from nanocrystalline Si (nc-Si) has been studied in comparison with that of photoluminescence (PL) from the nc-Si. The similarity is found in the temperature dependence of peak shift between EL and PL excited by ultraviolet light. The blue shift in both peaks is also found when the carrier generation rate is increased. The experimental results are indicative that the peak shifts due to the temperature and the generation rate are based on different mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 243
Copyright
Copyright © Materials Research Society 1998

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References

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