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Temperature Characterization of Pulsed Laser Annealing of Semiconductors

Published online by Cambridge University Press:  15 February 2011

D.L. Kwong  and
D.M. Kim
D.L. Kwong
Affiliation:
Dept. of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
D.M. Kim
Affiliation:
Dept. of Electrical Engineering, Rice University, Houston, Texas 77251
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Abstract

The dynamic characteristics of lattice temperature, T attained in Si under the influence of a high power laser beam irradiation are examined analytically over a wide range of laser wavelengths, pulse intensities and durations. The strongly temperature-dependent material parameters, such as optical absorption coefficient α(T) and thermal diffusivity D(T) are incorporated in heat diffusion equation, and their nonlinear coupling effect on the ensuing temperature in laser-processed semiconductors are examined. Specifically, the threshold pulse energy for surface melting is characterized as a function of both material and annealing laser beam parameters. This analytic description of pulsed laser heating of semiconductors should provide considerable insight into the transient heating phenomena and localized material modifications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 111
Copyright
Copyright © Materials Research Society 1983

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References

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