Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T07:55:53.549Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature and Polarization Dependence of the Optical Absorption in ZnGeP2 at two Micrometers

Published online by Cambridge University Press:  22 February 2011

M. Shah ,
M. C. Ohmer ,
D. W. Fischer ,
N. C. Fernelius ,
M. O. Manasreh ,
P. G. Schunemann  and
T. M. Pollak
M. Shah
Affiliation:
Wright Laboratory, WPAFB, OH 45433-7707
M. C. Ohmer
Affiliation:
Wright Laboratory, WPAFB, OH 45433-7707
D. W. Fischer
Affiliation:
Wright Laboratory, WPAFB, OH 45433-7707
N. C. Fernelius
Affiliation:
Wright Laboratory, WPAFB, OH 45433-7707
M. O. Manasreh
Affiliation:
Wright Laboratory, WPAFB, OH 45433-7707
P. G. Schunemann
Affiliation:
Lockheed Sanders, Nashua, NH 03061-2035
T. M. Pollak
Affiliation:
Lockheed Sanders, Nashua, NH 03061-2035
Get access

Abstract

The temperature and polarization dependence of the optical absorption in ZnGeP2 at two micrometers is reported for the first time over the temperature range from 10K to 300K. The radiation was normally incident upon the face of a cubic sample which contained the c-axis. The absorption of o-rays (E parallel to c), and erays (E perpendicular to c) was determined. It was found that the e-ray absorption coefficient was always significantly larger than the o-ray absorption coefficient and that it had a less significant temperature dependence. For example, the ratio of e-ray to o-ray absorption coefficient was approximately two at 300K and five at 77K. Correspondingly the o-ray absorption coefficients were reduced upon cooling to 77K by a factor of 2.5, while the e-ray absorption coefficients were reduced only slightly (10%-20%). These results indicate that for Type I optical parametric oscillators (OPOs) which use an oray pump beam, that performance may be improved by cooling the crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 463
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Refernces

1. Budni, P. A., Schunemann, P. G., Knight, M. G., Pollak, T. M., and Chicklis, E. P., OSA Proceedings on Advanced Solid State Lasers, Chase, Lloyd and Pinto, Albert, eds. OSA, DC, 13, 380 (1992).Google Scholar
2. Catella, G. C. et al. , Appl. Opt. 32, 3948 (1993).Google Scholar
3. Gorban, I. S., Gorynya, V. A., Lugovskii, V. V., and Tychina, I. I., Sov. Phys. Solid State, 16,1029 (1974).Google Scholar
4. Tregub, I. G., Ukrainskiy Fizicheskiy Zhurnal, 25, 1209 (1980).Google Scholar
5. Schunemann, P. G., and Pollak, T. M., OSA Proceedings on Advanced Solid State Lasers, Dube, George and Chase, Lloyd, eds. 10, 332 (1991).Google Scholar
6. Rud, Y.V. and Masagutova, R., Sov. Tech. Phys. Lett. 7, 72 (1981).Google Scholar