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Tem/Hrem Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire

Published online by Cambridge University Press:  10 February 2011

S. Ruvimov ,
Z. Liliental-Weber ,
C. Dieker ,
J. Washburn ,
M. Koike ,
H. Amano  and
I. Akasaki
S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
C. Dieker
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J. Washburn
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720
M. Koike
Affiliation:
Toyoda Gosei Co LTD, New Market Technical Division, Haruhi-cho Nishikasugai-gun, Aichi 452, Japan
H. Amano
Affiliation:
Meijo University, Tempakuku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Meijo University, Tempakuku-ku, Nagoya 468, Japan
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Abstract

High resolution electron microscopy has been applied to study the structure of epitaxial GaN layers grown by MOVPE on SiC and sapphire substrates. Defects in GaN were systematically studied for undoped, and Si- and Mg-doped samples. For both substrates, the Si-doping was found to decrease the dislocation density at the layer surface, while Mg-doping increased it. The density of nanopipes increased with both types of doping. Cracking of GaN layers was observed for SiC substrates. Crack formation was not detected in layers grown on sapphire. Mechanisms of defect generation are discussed in relation to the initial growth stages, the effect of doping, and the type of substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 287
Copyright
Copyright © Materials Research Society 1997

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References

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