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TEM Study of strain states in III-V semiconductor epitaxial layers.

Published online by Cambridge University Press:  18 March 2011

André ROCHER ,
Anne PONCHET ,
Stéphanie BLANC  and
Chantal FONTAINE
André ROCHER
Affiliation:
Centre d'Elaboration de Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, Toulouse, F-31055, France
Anne PONCHET
Affiliation:
Centre d'Elaboration de Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, Toulouse, F-31055, France
Stéphanie BLANC
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes, LAAS/CNRS, 7 av. Colonel Roche, Toulouse, F-31077, France
Chantal FONTAINE
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes, LAAS/CNRS, 7 av. Colonel Roche, Toulouse, F-31077, France
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Abstract

The strain states induced by a lattice mismatch in epitaxial systems have been studied by Transmission Electron Microscopy (TEM) using the moiré fringe technique on plane view samples. For the GaSb/(001)GaAs system, moiré patterns suggest that the GaSb layer is free of stress and homogeneously relaxed by a perfect square array of Lomer dislocations. A 10 nm thick layer of GaInAs (20% In concentration) grown on (001)GaAs does not give any moiré fringes for all low-index Bragg reflections: this result indicates that the effective misfit strain does not correspond to the theoretical one described by the elastic theory. Segregation effects are expected to play an important role in the relaxation of the misfit strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 673: Symposium P – Dislocations and Deformation Mechanisms in Thin Films and Small Structures , 2001 , P5.5
Copyright
Copyright © Materials Research Society 2001

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References

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