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Tem Study of Pt Silicide Formation on Clean Si Surfaces

Published online by Cambridge University Press:  22 February 2011

Y. Yokota ,
R. Matz  and
P.S. Ho
Y. Yokota
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
R. Matz
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
P.S. Ho
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
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Abstract

The microstructure of the Pt silicide formed on clean Si surfaces has been investigated using transmission electron microscopy. Pt up to 200Å was evaporated on atomically clean Si (100) and (111) substrates under an ultrahigh vacuum condition. The silicide was formed by annealing up to 600°C for (100) substrates in a purified He atmosphere and in-situ UHV for (111) substrates. For the (100) substrate, as-deposited Pt showed a fine polycrystalline structure with grain size of about 10tm. Upon annealing at 250° to 300°C, formation of Pt silicide was observed, which was primarily PtSi with only a small amount of Pt2Si. The silicide coverage was incomplete below about 1.5nm. Upon further annealing, the fraction of PtSi increased although Pt2Si persisted until 400°C. At 600°C, PtSi showed an epitaxial relationship with its c axis perpendicular to the Si (100) surface. On the Si (111) surface, PtSi formed epitaxially above 400°C. The silicide structure showed a multidiffraction pattern with three-fold symmetry, reflecting the three equivalent but strained epitaxial orientations. A high resolution lattice image technique was used to investigate the details of the epitaxial structures of PtSi on Si (100) and (111) substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 435
Copyright
Copyright © Materials Research Society 1984

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References

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