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Tem Study of Interfaces And Defects in Mocvd-Grown Gan on Sic on Simox

Published online by Cambridge University Press:  10 February 2011

W. L. Zhou ,
P. Pirouz ,
F. Namavar ,
P. C. Colter ,
M. Yoganathan ,
M. W. Leksono  and
J. I. Pankove
W. L. Zhou
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106–7204
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106–7204
F. Namavar
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106–7204
P. C. Colter
Affiliation:
Optoelectronics Department, Spire Corporation, One Patriots Park, Bedford, MA 01730–2396
M. Yoganathan
Affiliation:
Optoelectronics Department, Spire Corporation, One Patriots Park, Bedford, MA 01730–2396
M. W. Leksono
Affiliation:
Astralux, Inc., 2500 Central Avenue, Boulder, CO 80301–2814, USA
J. I. Pankove
Affiliation:
Astralux, Inc., 2500 Central Avenue, Boulder, CO 80301–2814, USA
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Abstract

SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high resolution (HR)TEM using cross-sectional thin foils. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a smaller fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and cubic SiC (3C-SiC) was found to be (0001)GaN//(1I1)sic; [1120]GaN//[110]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN//(001)SiC; [110]GaN//[110]SiC with respect to the 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. In this paper, the defects in both h-GaN and c-GaN are characterized and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 471
Copyright
Copyright © Materials Research Society 1998

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References

1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 70 (7), 868–870 (1997).Google Scholar
2. Khan, M. A., Chen, Q., Sun, C. J., Yang, J. W., Blasingame, M., Shur, M. S. and Park, H., Appl. Phys. Letter. 68(4), 514–516 (1996).Google Scholar
3. Nakamura, S., Jpn. J. Appl. Phys. 64 (10A), 1705–1707 (1991).Google Scholar
4. Sverdlov, B. N., Martin, G. A., Morkog, H., and Smith, D. J., Appl. Phys. Lett. 67, 2063–2065 (1995).Google Scholar
5. Smith, D. J., Chandrasekhar, D., Sverdlov, B., Botechkarev, A., Salvador, A., and Morkoq, H., Appl. Phys. Lett. 67, 1830–1832 (1995).Google Scholar
6. Ren, S. Y. and Dow, J. D., Appl. Phys. Lett. 69, 251–253 (1996).Google Scholar
7. Kuramata, A., Hirino, K., Domen, K., Shinohara, K., and Tanahashi, T., Appl. Phys. Lett. 67 2521–2523 (1995).Google Scholar
8. Watanabe, A., Takeuchi, T., Hirosawa, K., Amano, H., Hiramatsu, K., and Akasaki, I., J. Cryst. Growth 128, 391–396 (1993).Google Scholar
9. Fujieda, S. and Matsumoto, Y., Jpn. J. Appl. Phys. 30, L1665 (1991).Google Scholar
10. Hamdani, F., Botechkarev, A., Kim, W., Morkoq, H. M., Yeadon, M., Gibson, J. M., Tsen, S-C. Y., Smith, D. J., Reynolds, D. C., Look, D. C., Evans, K., Litton, C. W., Mitchel, W. C., and Hemenger, P., Appl. Phys. Lett. 70, 467–469 (1997).Google Scholar
11. Luo, J. S. and Lin, W. T., Appl. Phys. Lett. 69, 916–918 (1996).Google Scholar
12. Namavar, F., Colter, P., Cremins-Costa, A., Wu, C. H., Gagnon, E., Perry, D., and Pirouz, P., Mat. Res. Soc. Symp. Proc. Vol.423, 409–413 (1996).Google Scholar
13. Ning, X. J., Chien, F. R., Pirouz, P., Yang, J. W. and Khan, M. Asif, J. Mat. Res. 11(3), 580–592 (1996).Google Scholar
14. Chien, F. R., Ning, X. J., Stemmer, S., Pirouz, P., Bremser, M. D. and Davis, R. F., Appl. Phys. Lett. 68(19), 2678–2680 (1996).Google Scholar