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Tem Study of Crystallization of a-SiC in Contact With Silver

Published online by Cambridge University Press:  15 February 2011

Nanchang Zh  and
Robert Sinclair
Nanchang Zh
Affiliation:
On leave from Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, Ca94305, USA
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Abstract

Metal mediated crystallization of an amorphous phase has been found in many systems, in which eutectic phase diagrams are formed. It is interesting to know if an amorphous phase containing two elements, which can form compound, can react and form a crystalline compound at a low temperature in contact with metals. In this paper we studied the Ag/Sil−xCx system by transmission electron microscopy(TEM). It was foundthat amorphous silicon carbide was crystallized into cubic SiC at about 800°C in areas containing Ag. The silver diffused and segregated into the a-SiC phase upon annealing. The silver grains in the original deposited layer as well as those segregated act as nucleation sites for the crystallization of β-SiC. A nucleation temperature as low as 800°C was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 39
Copyright
Copyright © Materials Research Society 1995

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References

References:

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