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Tem Studies of Impurity Induced Defects in GaAs Grown by CBE

Published online by Cambridge University Press:  21 February 2011

Zul Jamal  and
P J Goodhew
Zul Jamal
Affiliation:
School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Perak Branch Campus, 31750 Tronoh, Perak Darul Ridzuan, Malaysia
P J Goodhew
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool, L69 3BX, UK
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Abstract

Defects generated from a thin impurity layer between a CBE-grown epilayer and its GaAs substrate have been studied by TEM. Line defects were observed to emerge randomly from the impurity layer in the various <110> directions either as single lines or as various vshaped dislocation pairs. The origin, frequency and significance of these defects is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 117
Copyright
Copyright © Materials Research Society 1994

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