No CrossRef data available.
Article contents
Tem Studies of Impurity Induced Defects in GaAs Grown by CBE
Published online by Cambridge University Press: 21 February 2011
Abstract
Defects generated from a thin impurity layer between a CBE-grown epilayer and its GaAs substrate have been studied by TEM. Line defects were observed to emerge randomly from the impurity layer in the various <110> directions either as single lines or as various vshaped dislocation pairs. The origin, frequency and significance of these defects is discussed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1994
References
2.
Werner, K., Heinecke, H., Weyers, M., Luth, H. and Balk, P. (1987) J. Cryst. Growth, 81,281.CrossRefGoogle Scholar
4.
Humphreys, C.J., Maher, D.M., Eaglesham, D.J. and Salisbury, I.G. (1989), Inst. Phys. Conf. Ser. No. 100, 241.Google Scholar