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Tem Studies of CD:ZN:TE-Based II-VI Superlattices and Epitaxial Layers

Published online by Cambridge University Press:  25 February 2011

P.D. Brown
Affiliation:
Applied Physics Group, School of Engineering and Applied Science, Science Site, South Road University of Durham, Durham, DH1 3LE, U.K.
H. Kelly
Affiliation:
Applied Physics Group, School of Engineering and Applied Science, Science Site, South Road University of Durham, Durham, DH1 3LE, U.K.
P.A. Clifton
Affiliation:
Applied Physics Group, School of Engineering and Applied Science, Science Site, South Road University of Durham, Durham, DH1 3LE, U.K.
J.T. Mullins
Affiliation:
Now at Dept. of Engineering, Osaka University, Osaka 565, Japan
M.Y. Simmons
Affiliation:
Applied Physics Group, School of Engineering and Applied Science, Science Site, South Road University of Durham, Durham, DH1 3LE, U.K.
K. Durose
Affiliation:
Applied Physics Group, School of Engineering and Applied Science, Science Site, South Road University of Durham, Durham, DH1 3LE, U.K.
A.W. Brinkman
Affiliation:
Applied Physics Group, School of Engineering and Applied Science, Science Site, South Road University of Durham, Durham, DH1 3LE, U.K.
T.D. Golding
Affiliation:
C2NVEO, Fort Belvoir, Virginia, USA Now at Space Vacuum Epitaxy Centre, University of Houston, Texas, USA
J. Dinan
Affiliation:
C2NVEO, Fort Belvoir, Virginia, USA
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Abstract

A TEM study is presented charting the development of a MOVPE growth process for the deposition of CdTe//ZnTe superlattices. In addition, MBE grown (Cd,Zn)Te//CdTe superlattices deposited onto GaAs and InSb substrates are compared.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Miles, R.H., Wu, G.Y., Johnson, M.B., McGill, T.C., Faurie, J.P. and Sivananthan, S., Appl. Phys. Lett. 48 1383 (1986)Google Scholar
2. Mathieu, H., Allegre, J., Chatt, A., Lefebvre, P. and Faurie, J.P., Phys. Rev. B38 7740 (1988)Google Scholar
3. Sivananthan, S., Chu, X., Boukerche, M. and Faurie, J.P., Appl. Phys. Lett. E 1291 (1985)Google Scholar
4. Clifton, P.A., Mullins, J.T., Brown, P.D., Lovergine, N., Brinkman, A.W. and Woods, J., J. Crystal Growth 22 468 (1990)Google Scholar
5. Mullins, J.T., Clifton, P.A., Brown, P.D., Hall, D.O. and Brinkman, A.W., Mat. Res. Soc. Proc. 161 375 (1990)Google Scholar
6. Kleebe, H.-J., Hamilton, W.J., Ahlgren, W.L., Johnson, S.M. and Ruhle, M., Mat. Res. Soc. Proc. 16. 63 (1990)Google Scholar
7. Golding, T.D., Qadri, S.B. and Dinan, J.H., J. Vacuum Sci. Technol. A7 616 (1989)CrossRefGoogle Scholar
8. Monfroy, G., Sivananthan, S., Chu, X., Faurie, J.P., Knox, R.D. and Staudermann, J.L., Appl. Phys. Lett. 49 152 (1986)Google Scholar
9. Kisker, D.W., Fuoss, P.H., Krajewski, J.J., Amirtharaj, P.M., Nakahara, S. and Menendez, J., J. Crystal Growth 86 210 (1988)Google Scholar
10. Shtrikman, H., Raizman, A., Oron, M. and Eger, D., Mater. Lett. 5 345 (1987)Google Scholar
11. Clifton, P.A., Mullins, J.T., Brown, P.D., Russell, G.J., Brinkman, A.W. and Woods, J., J. Crystal Growth 93 726 (1988)CrossRefGoogle Scholar
12. Mullins, J.T., Clifton, P.A., Brown, P.D., Brinkman, A.W. and Woods, J., J. Crystal Growth 101 100 (1990)CrossRefGoogle Scholar
13. Petruzzello, J., Olego, D., Chu, X. and Faurie, J.P., J. Appl. Phys. 66 2980 (1989)Google Scholar
14. Brown, P.D., Golding, T.D., Russell, G.J., Dinan, J.H. and Woods, J., Inst. Phys. Conf. Ser. No. 100 357 (1989)Google Scholar
15. Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., Zhang, X.C., Chang, S.K. and Nurmikko, A.V., Appl. Phys. Lett. 47 882 (1985).Google Scholar
16. Chew, N.G. and Cullis, A.G., Ultramicroscopy 23 175 (1987)Google Scholar
17. Feuillet, G., Cioccio, L. Di, Million, A., Cibert, J. and Tararenko, S., Inst. Phys. Conf. Ser. No. 87 135 (1987)Google Scholar
18. Brown, P.D., Hails, J.E., Russell, G.J. and Woods, J., Appl. Phys. Lett. 50 1144 (1987)CrossRefGoogle Scholar
19. Electron Microscopy of ThinCrystals, ed. Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W. and Whelan, M.J., pub. Butterworths, 1965, p 242.Google Scholar
20. Pirouz, P., Ernst, F. and Cheng, T.T., Mat. Res. Soc. Proc. 116 57 (1988)Google Scholar
21. Wood, S., Greggi, J. Jr., Farrow, R.F.C., Takei, W.J., Shirland, F.A. and Noreika, A.J., J. Appl. Phys. 55 4225 (1984)Google Scholar