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TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

Published online by Cambridge University Press:  01 February 2011

D.N. Zakharov ,
Z. Liliental-Weber ,
A. Motayed  and
S.N. Mohammad
D.N. Zakharov
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, Berkeley, CA 94720
A. Motayed
Affiliation:
Howard University, Electrical Engineering Department 2300 Sixth St. NW, Washington, DC 20059
S.N. Mohammad
Affiliation:
Howard University, Electrical Engineering Department 2300 Sixth St. NW, Washington, DC 20059
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Abstract

Ohmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.17
Copyright
Copyright © Materials Research Society 2003

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References

1. Mohammad, S.N. and Morkoç, H., J. Prog. Quantum Electron. 20, 361 (1996)Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Jp. J. Appl. Phys. Pt. 2, 35, L74 (1996)Google Scholar
3. Wu, Y.-F., Keller, B.P., Keller, S., Nguyen, N.X., Le, M., Nguyen, C., Jenkins, T.J., L.T. Kehias Denbaars, S.P. and Mishra, U.K., IEEE Electron Dev. Lett. 18, 293 (1997)Google Scholar
4. Ruvimov, S., Liliental-Weber, Z., Washburn, J., Duxstad, K.J., Haller, E.E., Fan, Z.-F., Mohammad, S. N., Kim, W., Botchkarev, A. E., and H. Morkoç, Appl. Phys. Lett. 69, 1556 (1996)Google Scholar
5. Smith, L.L., Davis, R.F., Liu, R.-J., Kim, M.J., and Carpenter, R.W., J. Mater. Res. 14, 1032 (1999)Google Scholar
6. Bright, A.N., Thomas, P.J., Weyland, M., Tricker, D.M., Humphreys, C.J., and Davies, R., J. Appl. Phys. 89, 3143 (2001)Google Scholar
7. Lim, S.-H., J. Washburn,Z. Liliental-Weber, D. Qiao,Appl. Phys. Lett. 78, 3797 (2001)Google Scholar
8. Dimitriadis, C.A., Th. Karakostas, Logothetidis, S., Kamarinos, G., Brini, J., Nouet, G., Solid-State Electronics 43, 1969 (1999)Google Scholar
9. Fan, Z., Mohammad, S.N., Kim, W., Ö. Aktas, Botchkarev, A.E., and H. Morkoç, Appl. Phys. Lett. 68, 1672 (1996)Google Scholar
10. Liu, Q.Z. and Lau, S.S., Solid-State Electronics 42, 677 (1998)Google Scholar
11. Motayed, A., Bathe, R., Wood, M.C., Diouf, O.S., Vispute, R.D. and Mohammad, S.N., J. Appl. Phys. 93, 1087 (2003)Google Scholar
12. Liliental-Weber, Z., Chen, Y., Ruvimov, S., and Washburn, J., Phys. Rev. Lett. 79, 2835 (1997)Google Scholar
13. Brydson, R., Garvie, L.A.J., Cravent, A.J., Sauer, H., Hofer, F. and Cressey, G., J. Phys. Condens. Matter. 5, 9379 (1993)Google Scholar