Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-03T00:50:30.428Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem Structural Studies on Zn+ Implanted and As+ /Zn+ Dually Implanted GaAs

Published online by Cambridge University Press:  25 February 2011

E. Morita ,
J. Kasahara ,
M. Arai  and
S. Kawado
E. Morita
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan
J. Kasahara
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan
M. Arai
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan
S. Kawado
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan
Get access

Abstract

Microdefects in Cr-doped SI LEC (001) GaAs wafers which were implanted with Zn+ or As /Zn and capless-annealed in an As ambient have been studied by means of transmission electron microscopy. Most of the microdefects in Zn +- implanted GaAs specimens were identified as precipitates and stacking fault tetrahedra (SFTs). Every SFT was accompanied by a precipitate at the apex. Most of the precipitates were distributed from Rp to Rp + 2∆Rp. Two types (α and β) of SFTs were differentiated by the arrangement of atoms in the core of the stair-rod partial dislocations bounding the periphery of the SFTs in a polar Frystal. β-SFTs were, however, predominantly formed in Zn+ implanted GaAs specimens. Dual implantation of As+ and Zn+ suppressed the formation of SFTs, but not that of precipitates. The formation of SFTs was found to be influenced by the deviation in stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 279
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morita, E., Kasahara, J. and Kawado, S., submitted to Jpn. J. Appl. Phys.Google Scholar
2. Kasahara, J., Arai, M. and Watanabe, N., J. Appl. Phys. 50, 541 (1979).CrossRefGoogle Scholar
3. Silcox, J. and Hirsch, P.B., Phil. Mag. 4, 72 (1959).Google Scholar
4. Gomez, A.M. and Hirsch, P.B., Phil. Mag. 38, 733 (1978).Google Scholar
5. Christel, L.A.: Ph.D.thesis, Stanford Univ., 1981.Google Scholar
6. Kasahara, J., Taira, K., Kato, Y., Arai, M. and Watanabe, N., Jpn. J. Appl. Phys. 22, L373 (1983).CrossRefGoogle Scholar
7. Gibbons, J.F., Johnson, W.S. and Mylroie, S.W.: Projected Range Statistics (Dowden Huchinson and Ross, Stroudsburg, Pa., 1975).Google Scholar
8. Kasahara, J., Sakurai, H., Kato, Y. and Watanabe, N., Jpn. J. Appl. Phys. 21, L103 (1982).CrossRefGoogle Scholar