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Tem Structural Characterization of Nm-Scale Islands in Highly Mismatched Systems

Published online by Cambridge University Press:  10 February 2011

S. Ruvimov ,
Z. Liliental-Weber ,
N.N. Ledentsov ,
M. Grundmann ,
D. Bimberg ,
V.M. Ustinov ,
A.YU. Egorov ,
P.S. Kop'ev ,
Zh.I. Alferov  and
K. Scheerschmidt
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S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, Berkeley, CA 94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, Berkeley, CA 94720
N.N. Ledentsov
Affiliation:
Technische Universitnt Berlin, Hardenbergstr.36, D-10623, Berlin
M. Grundmann
Affiliation:
Technische Universitnt Berlin, Hardenbergstr.36, D-10623, Berlin
D. Bimberg
Affiliation:
Technische Universitnt Berlin, Hardenbergstr.36, D-10623, Berlin
V.M. Ustinov
Affiliation:
A.F. Ioffe Institute, Politekhniczeskaya 26, 194021, St.Petersburg, Russia
A.YU. Egorov
Affiliation:
A.F. Ioffe Institute, Politekhniczeskaya 26, 194021, St.Petersburg, Russia
P.S. Kop'ev
Affiliation:
A.F. Ioffe Institute, Politekhniczeskaya 26, 194021, St.Petersburg, Russia
Zh.I. Alferov
Affiliation:
A.F. Ioffe Institute, Politekhniczeskaya 26, 194021, St.Petersburg, Russia
K. Scheerschmidt
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120, Halle/S, Germany
U. Gösele
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120, Halle/S, Germany
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Abstract

Transmission electron microscopy has been applied to study the ordering in size and shape of InAs quantum dots and in their lateral distribution. InAs islands were grown by MBE on GaAs substrates at different As-pressures and growth temperatures. Experiments with growth interupption support the theoretical predictions concerning equilibrium island size, shape and arrangement. The stability of the equilibrium dot arrays to changing of growth conditions was studied by varying the deposition temperature, arsenic pressure or growth interruption time. Significant deviation from the optimal As-pressure towards both the lower and higher values was shown to supress the formation of InAs dots resulting either in mesoscopic InAs clusters or 2D corrugated islands. Energy benefit due to the strain relaxation at island edges explains the experimental results better than kinetic consideration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 383
Copyright
Copyright © Materials Research Society 1996

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References

1. Goldstein, L., Glas, F., Marzin, J.Y., Charasse, M.N., and Roux, G. Le, Appl. Phys. Lett. 47, 1099 (1985)Google Scholar
2. Ledentsov, N.N., Grundmann, M., Kirstaedter, N., Christen, J., Heitz, R., Böhrer, J., Heinrichsdorff, F., Bimberg, D., Ruvimov, S.S., Werner, P., Richter, U., Glösele, U., Heydenreich, J., Ustinov, V.M., Egorov, A.Yu., Maximov, M.V., Kop'ev, P.S. and Alferov, Zh.I., Proc. of the 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 1994, Lockwood, D.J., ed. (World Scientific, Singapore, 1995), vol.3, 1855 Google Scholar
3. Guha, S., Madhukar, A., and Rajkumar, K.C., Appl.Phys.Lett. 57, 2110 (1990)Google Scholar
4. Eaglesham, D.J. and Cerullo, M., Phys.Rev.Lett. 64, 1943 (1990)Google Scholar
5. Snyder, C.W., Orr, B.G., Kessler, D., and Sander, L.M., Phys.Rev.Lett. 66, 3032 (1991)Google Scholar
6. Orr, B.G., Kessler, D., Snyder, C.W., and Sander, L., Europhys.LetL 19, 33 (1992)Google Scholar
7. Shchukin, V.A., Ledentsov, N.N., Kop'ev, P.S., and Bimberg, D., Phys. Rev. Lett. 75, 2968 (1995)Google Scholar
8. Ruvimov, S., Werner, P., Scheerschmidt, K., Gllsele, U., Heydenreich, J., Richter, U., Ledentsov, N.N., Grundmann, M., Bimberg, D., Ustinov, V.M., Egorov, A.Yu., Kop'ev, P.S., and Alferov, Zh.I., Phys.Rev. B 51, 14766 (1995)Google Scholar
9. Ruvimov, S. and Scheerschmidt, K., Phys. St. Sol. (a) 150, 471 (1995)Google Scholar